A 28 GHz GaN HEMT quasi‐circulator with high isolation and high power‐handling capability

2021 ◽  
Author(s):  
Xiyao Wang ◽  
Qi Cai ◽  
Haoshen Zhu ◽  
Wenjie Feng ◽  
Quan Xue ◽  
...  
Keyword(s):  
High Power ◽  
High Isolation ◽  
Gan Hemt ◽  
Power Handling ◽  
Power Handling Capability

Gradient honeycomb absorber with high power handling capability

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
L. Liu ◽  
Y. Zhang ◽  
J. Q. Sheng ◽  
Y. M. Wei ◽  
R. M. Liu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

HTS narrowband stripline filter at 2.1 GHz with high power handling capability

2006 ◽  
Vol 49 (2) ◽  
pp. 254-257 ◽  
Author(s):  
Xubo Guo ◽  
Xiaoping Zhang ◽  
Bisong Cao ◽  
Bin Wei ◽  
Lijuan Mu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  
Keyword(s):  
High Power ◽  
High Concentration ◽  
Photoconductive Switch ◽  
Turn On ◽  
Power Handling ◽  
Switched Current ◽  
Power Handling Capability ◽  
Pn Junctions ◽  
Switching Characteristics ◽  
Switch Voltage

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

Wideband Gysel HMSIW power divider with high power-handling capability

2018 ◽  
Vol 10 (3) ◽  
pp. 308-312
Author(s):  
Kaijun Song ◽  
Te Kong ◽  
Yu Zhu ◽  
Hongxing Xu ◽  
Lifei Jiang ◽  
...  
Keyword(s):  
High Power ◽  
Reasonable Agreement ◽  
Impedance Matching ◽  
Power Divider ◽  
Mode Analysis ◽  
Analysis Method ◽  
Input Output ◽  
Output Impedance ◽  
Power Handling ◽  
Power Handling Capability

AbstractA novel Gysel power divider with high power-handling capability based on half-mode substrate integrated waveguide (HMSIW) has been presented in this paper. A HMSIW ring is used and good input/output impedance matching is achieved based on HMSIW-microstrip taper transition. Two microstrip stubs are introduced in HMSIW ring to assemble two isolation resistors to improve the isolation between the output ports. The even- and odd-mode analysis method is used for the presented circuit. A prototype of the presented power divider is designed, fabricated, and measured. The measured results show a reasonable agreement with the simulated ones.

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