Mixed mode morphology in elastomeric blend nanocomposites: Effect on vulcanization, thermal stability and solvent permeability

Flame retardant rubber foams of ethylene vinyl acetate (EVA)/natural rubber (NR)/layered silicate blends filled with silicon dioxide (SiO2) were prepared by using azodicarbonamide (ADC) as a blowing agent. Specifically, SiO2 was added in EVA/NR blend nanocomposites to produce good flame retardant foams. The properties of EVA/NR blend nanocomposite foams with different SiO2 loading (0, 20, 30, 40 parts per hundred rubber, phr) were investigated through transmission electron microscopy (TEM), scanning electron microscopy (SEM), rheological property test, mechanical property measurement, flammability tests, thermogravimetry analysis (TGA) and pyrolysis-gas chromatography-mass spectrometry (Pyrolysis-GC-MS). Compared with the simple EVA/NR blend nanocomposite, the added SiO2 increased the blend compatibility between EVA and NR phases and melt strength/viscosity of the EVA/NR blend nanocomposites, thus promoting cellular structure of the EVA/NR nanocomposite foams. Increasing SiO2 loading resulted in higher cell density, smaller cell size, and lower volume of void. These improvements caused higher strength and elastomeric recovery. The LOI test results showed that flame retardancy of the EVA/NR blend nanocomposite foams increased at higher SiO2 loading as a result of formation of insulation silicon dioxide-based char. TGA and pyrolysis-GC-MS analyses also validated the finding that the silicon dioxide-based char in the foamed samples containing higher SiO2 loading was more effective on improving thermal stability, which was responsible for lower material combustibility and better flame retardancy. Based on our finding, it was concluded that a good flame retardant EVA/NR blend nanocomposite foam with the best improvement in strength and elastomeric recovery was achieved when combined with 40 phr SiO2.

The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138634 ◽

1995 ◽

Vol 53 ◽

pp. 452-453

Author(s):

J. Liu ◽

N. D. Theodore ◽

D. Adams ◽

S. Russell ◽

T. L. Alford ◽

...

Keyword(s):

Thermal Stability ◽

Titanium Nitride ◽

Large Scale ◽

Standard Procedure ◽

Alloy Film ◽

Electron Beam Evaporation ◽

Copper Metallization ◽

Nominal Composition ◽

Ti Alloy ◽

Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Thermal stability and decomposition of perfluoroalkyl substances on spent granular activated carbon

10.1021/scimeetings.0c06806 ◽

2020 ◽

Author(s):

Feng Xiao ◽

Bin Yao ◽

Pavankumar Challa Sasi ◽

Svetlana Golovko ◽

Dana Soli ◽

...

Keyword(s):

Thermal Stability ◽

Activated Carbon ◽

Granular Activated Carbon ◽

Perfluoroalkyl Substances

The modality effect as an interaction between the auditory and visual systems in a mixed mode situation.

PsycEXTRA Dataset ◽

10.1037/e432362004-001 ◽

1982 ◽

Author(s):

Kjell Ohlsson ◽

Jerker Roennberg

Keyword(s):

Mixed Mode ◽

Modality Effect ◽

Visual Systems

Thermal stability of Al-Cu-Fe icosahedral alloys

Journal de Physique I ◽

10.1051/jp1:1991242 ◽

1991 ◽

Vol 1 (12) ◽

pp. 1823-1836 ◽

Cited By ~ 29

Author(s):

M. Bessière ◽

A. Quivy ◽

S. Lefebvre ◽

J. Devaud-Rzepski ◽

Y. Calvayrac

Keyword(s):

Thermal Stability ◽

Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

Journal de Physique III ◽

10.1051/jp3:1994154 ◽

1994 ◽

Vol 4 (4) ◽

pp. 653-657

Author(s):

B. Bonzi ◽

M. El Khomssi ◽

H. Lanchon-Ducauquis

Keyword(s):

Thermal Stability ◽

Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1998214 ◽

1998 ◽

Vol 08 (PR2) ◽

pp. Pr2-63-Pr2-66 ◽

Cited By ~ 1

Author(s):

R. Varga ◽

P. Vojtaník ◽

A. Lovas

Keyword(s):

Thermal Stability ◽

Magnetic Properties ◽

Thermal Stability Of