Kinetics of the homogeneous, unimolecular elimination reactions of ethyl oxamate, ethylN,N-dimethyloxamate and ethyl oxanilate in the gas phase

2005 ◽  
Vol 18 (6) ◽  
pp. 539-545 ◽  
Author(s):  
Esker V. Chacin ◽  
María Tosta ◽  
Armando Herize ◽  
Rosa M. Domínguez ◽  
Ysaias Alvarado ◽  
...  
1993 ◽  
Vol 6 (2) ◽  
pp. 85-94 ◽  
Author(s):  
Gabriel Chuchani ◽  
Ignacio Martin ◽  
Rosa M. Dominguez ◽  
Alexandra Rotinov ◽  
Sara Pekerarm ◽  
...  

1995 ◽  
Vol 27 (5) ◽  
pp. 517-523 ◽  
Author(s):  
Nouria A. Al-Awadi ◽  
Mohamed H. El-Nagdi ◽  
Tommy Mathew

1973 ◽  
Vol 51 (3) ◽  
pp. 366-369 ◽  
Author(s):  
P. N. Dastoor ◽  
E. U. Emovon

The kinetics of the thermal decomposition of ethyl, isopropyl, and t-butyl cyanides into HCN and the corresponding defines have been studied in a seasoned silica vessel in a flow system in the absence and presence of toluene as inhibitor. The reactions are homogeneous and the unimolecular rate constants are expressible by the following Arrhenius equations:[Formula: see text]


1979 ◽  
Vol 57 (19) ◽  
pp. 2621-2625 ◽  
Author(s):  
J. L. Holmes ◽  
D. L. McGillivray ◽  
D. Yuan

The gas phase pyrolyses of exo-2-norbornyl chloride and cyclopentyl chloride were studied in the temperature range 570–670 K. The results obtained show that these compounds behave as typical secondary halides insofar as the kinetics of their hydrogen chloride elimination reactions are concerned. Labelling experiments showed that in the formation of both norbornene and cyclopentene, a cis-1,2 elimination with a deuterium isotope effect of ∼3 was involved. Nortricyclene also was produced from exo-2-norbornyl chloride, via a trans 1,3 elimination; this process is analogous to a fragmentation of the ionized molecule. No gas phase Wagner–Meerwein rearrangement was involved in the formation of either norbornene or nortricyclene.


1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.


2021 ◽  
Vol 125 (10) ◽  
pp. 2069-2076
Author(s):  
Brendan C. Sweeny ◽  
David C. McDonald ◽  
Nicholas S. Shuman ◽  
Albert A. Viggiano ◽  
Juergen Troe ◽  
...  

2006 ◽  
Vol 19 (12) ◽  
pp. 836-840 ◽  
Author(s):  
Rafael Añez ◽  
Rodolfo Izquierdo ◽  
Alba Vidal ◽  
Tania Cordova ◽  
Aníbal Sierraalta ◽  
...  

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