Liquid phase epitaxy (LPE) grown Bi, Ga, Al substituted iron garnets with huge Faraday rotation for magneto-optic applications

2004 ◽  
Vol 201 (7) ◽  
pp. 1398-1402 ◽  
Author(s):  
P. G�rnert ◽  
T. Aichele ◽  
A. Lorenz ◽  
R. Hergt ◽  
J. Taubert
Keyword(s):  
Liquid Phase ◽  
Faraday Rotation ◽  
Liquid Phase Epitaxy ◽  
Iron Garnets ◽  
Magneto Optic

scholarly journals MAGNETO-OPTIC GARNET LAYERS BY LIQUID PHASE EPITAXY

1987 ◽  
Vol 11 (S_1_ISMO) ◽  
pp. S1_341-345 ◽  
Author(s):  
W. TOLKSDORF ◽  
H. DAMMANN ◽  
E. PROSS
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Magneto Optic

Growth Peculiarities and Magnetic Properties of (LuBi)3Fe5O12 Films by LPE Method

2013 ◽  
Vol 200 ◽  
pp. 256-260 ◽  
Author(s):  
I.I. Syvorotka ◽  
Igor M. Syvorotka ◽  
S.B. Ubizskii
Keyword(s):  
Magnetic Properties ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Film Thickness ◽  
Faraday Rotation ◽  
Liquid Phase Epitaxy ◽  
Magnetization Reversal ◽  
Room Temperature ◽  
Mirror Surface ◽  
Different Types

The series of (LuBi)3Fe5O12 film were grown on (111) oriented GGG substrate with diameters 1, 2 and 3 inch by liquid phase epitaxy using Bi2O3-base flux. Different types of surface morphology on the grown films were observed. The films’ surface was smooth and mirror while the film thickness was less than 13 μm and becomes rough for thickness above this value. The grown films were characterized by measuring magnetization loops and magneto-optic Faraday rotation under magnetization reversal as well as ferromagnetic resonance (FMR). All films with mirror surface demonstrate the in-plane magnetization, high Faraday rotation and FMR linewidth about 0.8 Oe at 9.1 GHz and room temperature.

Large magneto-optic enhancement in ultra-thin liquid-phase-epitaxy iron garnet films

2015 ◽  
Vol 107 (1) ◽  
pp. 011104 ◽  
Author(s):  
Miguel Levy ◽  
A. Chakravarty ◽  
H.-C. Huang ◽  
R. M. Osgood
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Garnet Films ◽  
Iron Garnet ◽  
Magneto Optic

Growth of Yttrium iron garnet multi-layers by liquid phase epitaxy for single mode magneto-optic waveguides

1987 ◽  
Vol 83 (1) ◽  
pp. 15-22 ◽  
Author(s):  
W. Tolksdorf ◽  
H. Dammann ◽  
E. Pross ◽  
B. Strocka ◽  
H.J. Tolle ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Yttrium Iron Garnet ◽  
Single Mode ◽  
Yttrium Iron ◽  
Iron Garnet ◽  
Magneto Optic

Development of liquid phase epitaxy-grown (Bi, Gd, Lu)-substituted thin-film iron garnets

2006 ◽  
Vol 99 (8) ◽  
pp. 08M702 ◽  
Author(s):  
I. Nistor ◽  
C. Holthaus ◽  
I. D. Mayergoyz ◽  
C. Krafft
Keyword(s):  
Thin Film ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Iron Garnets

Liquid phase epitaxy of garnet double layers for magneto optic read heads

1988 ◽  
Vol 24 (6) ◽  
pp. 2563-2564 ◽  
Author(s):  
B. Ferrand ◽  
B. Chambaz ◽  
J.C. Gay ◽  
M. Olivier ◽  
J.C. Lehureau
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Double Layers ◽  
Magneto Optic

Magneto-Optic Eddy Current Introscopy Based on Garnet Films

2013 ◽  
Vol 200 ◽  
pp. 245-249 ◽  
Author(s):  
Victor Vishnevskii ◽  
Vladimir N. Berzhansky ◽  
Vladislav Mikhailov ◽  
Fyodor Pankov ◽  
Alexandr Nedviga ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Eddy Current ◽  
Liquid Phase Epitaxy ◽  
Crystallographic Orientation ◽  
Garnet Films ◽  
Stroboscopic Illumination ◽  
Magneto Optic

Magneto-optic eddy current introscopy device based on garnet films with stroboscopic illumination is described. Experiment was done with liquid-phase epitaxy garnet films with composition (Bi,Eu,Lu)3(Fe,Ga,Al)5O12 and (Bi,Tm)3(Fe,Ga)5O12, crystallographic orientation (111).

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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