On the nano-engineered III-nitride quantum-wells-based deep-UV light emitting diodes for COVID disinfection applications

Author(s):  
Trailokya Bhattarai ◽  
M. Yasin Akhtar Raja ◽  
Abasifreke Ebong ◽  
M. Khizar Bhutta
2012 ◽  
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Na Gao ◽  
Kai Huang ◽  
Jinchai Li ◽  
Shuping Li ◽  
Xu Yang ◽  
...  

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Vol 118 (23) ◽  
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Youn Joon Sung ◽  
Dong-Woo Kim ◽  
Geun Young Yeom ◽  
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Vol 46 (No. 23) ◽  
pp. L537-L539 ◽  
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Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Surendra Srivastava ◽  
Thomas Katona ◽  
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2008 ◽  
Vol 205 (5) ◽  
pp. 1070-1073 ◽  
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E. Dimakis ◽  
A. Yu. Nikiforov ◽  
C. Thomidis ◽  
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D. J. Smith ◽  
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High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.


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Vol 45 (No. 12) ◽  
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Sameer Chhajed ◽  
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2007 ◽  
Vol 19 (8-9) ◽  
pp. 764-769 ◽  
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Gregory A. Garrett ◽  
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