High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells

Author(s):  
Heng Li ◽  
Shiou-Yi Kuo ◽  
Tien-Chang Lu ◽  
Jun-Rong Chen ◽  
Chia-Jui Chang
2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.


ACS Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 587-594 ◽  
Author(s):  
Zhuofei He ◽  
Yang Liu ◽  
Zhaoliang Yang ◽  
Jing Li ◽  
Jieyuan Cui ◽  
...  

2010 ◽  
Vol 108 (10) ◽  
pp. 102813 ◽  
Author(s):  
Sung-Nam Lee ◽  
Jihoon Kim ◽  
Kyoung-Kook Kim ◽  
Hyunsoo Kim ◽  
Han-Ki Kim

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
Nana Wang ◽  
Liangdong Zhang ◽  
Renmeng Zou ◽  
...  

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang

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