Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

AbstractDeep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

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Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.1170 ◽

2016 ◽

Vol 858 ◽

pp. 1170-1173 ◽

Cited By ~ 3

Author(s):

Giuseppe Greco ◽

Ferdinando Iucolano ◽

Filippo Giannazzo ◽

Salvatore di Franco ◽

Domenico Corso ◽

...

Keyword(s):

Electrical Properties ◽

Barrier Height ◽

Transport Mechanism ◽

Carrier Transport ◽

Schottky Barrier Height ◽

Temperature Dependent ◽

Current Voltage ◽

Thermionic Field Emission ◽

Current Voltage Characteristics ◽

Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

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Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

Advances in Condensed Matter Physics ◽

10.1155/2010/526929 ◽

2010 ◽

Vol 2010 ◽

pp. 1-7 ◽

Cited By ~ 9

Author(s):

P. Pipinys ◽

V. Lapeika

Keyword(s):

Temperature Dependence ◽

Leakage Current ◽

Reverse Bias ◽

Electron Tunneling ◽

Schottky Diodes ◽

Temperature Dependent ◽

Semiconductor Interface ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Model Temperature

Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.

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Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.313-314.270 ◽

2013 ◽

Vol 313-314 ◽

pp. 270-274

Author(s):

M. Faisal ◽

M. Asghar ◽

Khalid Mahmood ◽

Magnus Willander ◽

O. Nur ◽

...

Keyword(s):

Barrier Height ◽

Ideality Factor ◽

Doping Concentration ◽

Series Resistance ◽

Schottky Diodes ◽

Thermionic Emission ◽

Temperature Dependent ◽

Current Voltage ◽

Capacitance Voltage ◽

Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

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Time Dependence of Current–Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure

Zeitschrift für Naturforschung A ◽

10.5560/zna.2011-0005 ◽

2011 ◽

Vol 66 (8-9) ◽

pp. 576-580 ◽

Cited By ~ 3

Author(s):

Nazim Ucar ◽

Ahmet Faruk Özdemira ◽

Durmus Ali Aldemira ◽

Güven Çankayab

Keyword(s):

Hydrostatic Pressure ◽

Barrier Height ◽

Ideality Factor ◽

Interfacial Layer ◽

Schottky Barrier Height ◽

Schottky Diodes ◽

Pressure Coefficient ◽

Characteristic Parameters ◽

Current Voltage ◽

Current Voltage Characteristics

Abstract The effect of time on the characteristic parameters of Pb/p-Si Schottky diodes has been presented as a function of hydrostatic pressure. Current-voltage curves of the Pb=p-Si Schottky diodes have been measured at immediate, 15, 30, 60, and 120 min intervals under 1, 2, and 4 kbar hydrostatic pressure. It has been found that the values of the ideality factor have been approximately unchanged with increasing time. On the other hand, the barrier height of the Pb=p-Si structure slowly increase with increasing time, while these parameters also change with hydrostatic pressure. The diode shows nonideal current-voltage behaviour with an ideality factor greater than unity that can be ascribed to the interfacial layer and the interface states. In addition, the Schottky barrier height increases with a linear pressure coefficient of 92 meV=kbar, which is higher than the pressure coefficient of the silicon fundamental band gap.

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Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Materials ◽

10.3390/ma14102678 ◽

2021 ◽

Vol 14 (10) ◽

pp. 2678

Author(s):

Philipp Wendel ◽

Dominik Dietz ◽

Jonas Deuermeier ◽

Andreas Klein

Keyword(s):

Magnetron Sputtering ◽

Schottky Barrier ◽

Barrier Height ◽

Oxygen Vacancies ◽

Schottky Barrier Height ◽

Schottky Diodes ◽

Hysteresis Behavior ◽

Current Voltage ◽

Current Voltage Characteristics

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

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