Photoluminescence study of polycrystalline silicon thin films prepared by liquid and solid phase crystallization

2013 ◽  
Vol 210 (8) ◽  
pp. 1652-1656 ◽  
Author(s):  
S. Schönau ◽  
J. Rappich ◽  
M. Weizman ◽  
D. Amkreutz ◽  
B. Rech
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Photoluminescence Study ◽  
Silicon Thin Films

Large area polycrystalline silicon thin films grown by laser-induced nucleation and solid phase crystallization

1997 ◽  
Vol 296 (1-2) ◽  
pp. 49-52 ◽  
Author(s):  
D. Toet ◽  
B. Koopmans ◽  
R.B. Bergmann ◽  
B. Richards ◽  
P.V. Santos ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Large Area ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films

Electrical activity of geometrically necessary dislocations in polycrystalline silicon thin films prepared by solid phase crystallization

2014 ◽  
Vol 211 (11) ◽  
pp. 2488-2492 ◽  
Author(s):  
Cangming Ke ◽  
Felix Law ◽  
Per I. Widenborg ◽  
Armin G. Aberle ◽  
Ian M. Peters
Keyword(s):  
Thin Films ◽  
Electrical Activity ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Medium range order engineering in amorphous silicon thin films for solid phase crystallization

2013 ◽  
Vol 113 (19) ◽  
pp. 193511 ◽  
Author(s):  
Felix Law ◽  
Per I. Widenborg ◽  
Joachim Luther ◽  
Bram Hoex
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Range Order ◽  
Solid Phase Crystallization ◽  
Medium Range Order ◽  
Silicon Thin Films ◽  
Medium Range
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