Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation

2020 ◽  
Vol 694 ◽  
pp. 137639 ◽  
Author(s):  
Salar H. Sedani ◽  
Ozlen F. Yasar ◽  
Mehmet Karaman ◽  
Rasit Turan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Boron Doping ◽  
Electron Beam Evaporation ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Medium range order engineering in amorphous silicon thin films for solid phase crystallization

2013 ◽  
Vol 113 (19) ◽  
pp. 193511 ◽  
Author(s):  
Felix Law ◽  
Per I. Widenborg ◽  
Joachim Luther ◽  
Bram Hoex
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Range Order ◽  
Solid Phase Crystallization ◽  
Medium Range Order ◽  
Silicon Thin Films ◽  
Medium Range

Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias

2006 ◽  
Vol 89 (2) ◽  
pp. 022104 ◽  
Author(s):  
Seung-Ik Jun ◽  
Philip D. Rack ◽  
Timothy E. McKnight ◽  
Anatoli V. Melechko ◽  
Michael L. Simpson
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films

scholarly journals The Substrate Effects on Kinetics and Mechanism of Solid-Phase Crystallization of Amorphous Silicon Thin Films

ETRI Journal ◽  
1997 ◽  
Vol 19 (1) ◽  
pp. 25-34 ◽  
Author(s):  
Yoon-Ho Song Song ◽  
Seung-Youl Kang Kang ◽  
Kyoung Ik Cho Cho ◽  
Hyung Joun Yoo Yoo
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Kinetics And Mechanism ◽  
Solid Phase Crystallization ◽  
Substrate Effects ◽  
Silicon Thin Films

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Stress Induced During the Solid-phase Crystallization of Amorphous Silicon Deposited by LPCVD

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Mohammed-Brahim ◽  
K. Kis-Sion ◽  
D. Briand ◽  
M. Sarret ◽  
F. Lebihan ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Pressure Chemical ◽  
Hall Effect Measurements ◽  
Deposition Techniques

AbstractThe Solid Phase Crystallization (SPC) of amorphous silicon films deposited by Low Pressure Chemical Vapor phase Deposition (LPCVD) using pure silane at 550'C was studied by in-situ monitoring the film conductance. The saturation of the conductance at the end of the crystallization process is found transient. The conductance decreases slowly after the onset of the saturation. This degradation is also observed from other analyses such as ellipsometry spectra, optical transmission and Arrhenius plots of the conductivity between 250 and 570K. Hall effect measurements show that the degradation is due to a decrease of the free carrier concentration n and not to a decrease of the mobility. This indicates a constant barrier height at the grain boundaries. The decrease of n is then due to a defect creation in the grain. Hence, whatever the substrate used, an optimum crystallization time exists. It depends on the amorphous quality film which is determined by the deposition techniques and conditions and on the crystallization parameters.

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