Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications

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Rafael Reif
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The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm×20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 µm and its preferred orientation is [111] after ZMR process.


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