Photoinduced changes in the hysteresis loop and photovoltaic effect of the magnetron sputtered epitaxial BiFeO3 film

2014 ◽  
Vol 212 (2) ◽  
pp. 410-413 ◽  
Author(s):  
Zengwei Peng ◽  
Baoting Liu
Keyword(s):  
Hysteresis Loop ◽  
Photovoltaic Effect ◽  
Bifeo3 Film ◽  
Photoinduced Changes

Photovoltaic Effect in BiFeO3 Film Deposited by RF Magnetron Sputtering

2020 ◽  
Vol 20 (1) ◽  
pp. 564-567
Author(s):  
Jian-Hua Qiu ◽  
Meng-Jiao Chen ◽  
Tian-Xiang Zhao ◽  
Zhi-Hui Chen ◽  
Ning-Yi Yuan ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photovoltaic Effect ◽  
Rf Magnetron Sputtering ◽  
Bifeo3 Film

Polarization-controlled leakage current and photovoltaic effect in highly preferentially oriented BiFeO3 film

2013 ◽  
Vol 66 (3) ◽  
pp. 429-433 ◽  
Author(s):  
Yuxia Sun ◽  
Yong Zhou ◽  
Hongri Liu ◽  
Zhao Xia ◽  
Man Luo ◽  
...  
Keyword(s):  
Leakage Current ◽  
Photovoltaic Effect ◽  
Bifeo3 Film

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO3 film

2015 ◽  
Vol 08 (01) ◽  
pp. 1550002 ◽  
Author(s):  
Zeng-Wei Peng ◽  
Ying-Long Wang ◽  
Bao-Ting Liu
Keyword(s):  
Indium Tin Oxide ◽  
Open Circuit Voltage ◽  
Photovoltaic Effect ◽  
Strong Dependence ◽  
Sol Gel ◽  
Open Circuit ◽  
Pt Electrode ◽  
Barrier Heights ◽  
Ito Electrode ◽  
Bifeo3 Film

Photovoltaic (PV) effect of polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film grown on Pt (111)/ Ti/SiO 2/ Si (001) substrate using sol–gel method has been investigated. The BLFNO film possesses good ferroelectric property and large twice-remanent polarization. It is found that PV response exhibited a strong dependence on the potential of top indium tin oxide (ITO) and bottom Pt electrode. The open circuit voltage is -0.67 V when the potential of ITO electrode is higher than that of Pt electrode and 0.45 V when the potential of ITO electrode is lower than that of Pt electrode. This can be interpreted by the variation of barrier heights at both ITO/BLFNO and BLFNO/ Pt interfaces.

Enhanced photovoltaic effect of polycrystalline BiFeO3 film

2013 ◽  
Vol 210 (4) ◽  
pp. 819-822 ◽  
Author(s):  
Baoting Liu ◽  
Zengwei Peng ◽  
Jikui Ma ◽  
Jinfeng Wang ◽  
Qingxun Zhao ◽  
...  
Keyword(s):  
Photovoltaic Effect ◽  
Bifeo3 Film

Improved Photovoltaic Effect of p–i–n Structured BiFeO3 Film Deposited by Radio-Frequency Magnetron Sputtering

2020 ◽  
Vol 20 (4) ◽  
pp. 2617-2621
Author(s):  
Jian-Hua Qiu ◽  
Meng-Jiao Chen ◽  
Tian-Xiang Zhao ◽  
Zhi-Hui Chen ◽  
Ning-Yi Yuan ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photovoltaic Effect ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Bifeo3 Film

EXPERIMENTAL INVESTIGATIONS OF THE QUANTUM PHOTOVOLTAIC EFFECT IN InAs-GaSb SEMICONDUCTOR SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-183-C5-186
Author(s):  
J. BLEUSE ◽  
P. VOISIN ◽  
M. VOOS ◽  
L. L. CHANG ◽  
L. ESAKI
Keyword(s):  
Photovoltaic Effect ◽  
Experimental Investigations ◽  
Semiconductor Superlattices

Application of AFP Nanoprobing Light-Induced Photovoltaic Current in the Failure Analysis

2017 ◽  
Author(s):  
C.Q. Chen ◽  
P.T. Ng ◽  
G.B. Ang ◽  
Francis Rivai ◽  
S.L. Ting ◽  
...  
Keyword(s):  
Image Analysis ◽  
Failure Analysis ◽  
Photovoltaic Effect ◽  
Electrical Characterization ◽  
Fault Isolation ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Current Image ◽  
Scaling Down ◽  
Detailed Circuit

Abstract As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected areas can be isolated, but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device performance and to prove the problematic structure electrically. But sometimes the EFA spot coverage is too big to do nanoprobing analysis. Then further narrow-down is quite critical to identify the suspected structure before nanoprobing is employed. That means there is a gap between global fault isolation and localized device analysis. Under these kinds of situation, PVC and AFP current image are offen options to identify the suspected structure, but they still have their limitation for many soft defect or marginal fails. As in this case, PVC and AFP current image failed to identify the defect in the spot range. To overcome the shortage of PVC and AFP current image analysis, laser was innovatively applied in our current image analysis in this paper. As is known to all, proper wavelength laser can induce the photovoltaic effect in the device. The photovoltaic effect induced photo current can bring with it some information of the device. If this kind of information was properly interpreted, it can give us some clue of the device performance.

scholarly journals Recent Progress in the Development of Graphene Detector for Terahertz Detection

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 4987
Author(s):  
Jianlong Liu ◽  
Xin Li ◽  
Ruirui Jiang ◽  
Kaiqiang Yang ◽  
Jing Zhao ◽  
...  
Keyword(s):  
Recent Progress ◽  
Photovoltaic Effect ◽  
Dimensional Structure ◽  
High Electron ◽  
Terahertz Waves ◽  
Terahertz Detectors ◽  
Basic Part ◽  
Suitable Material ◽  
Terahertz Region ◽  
Frequency Independent

Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.

Enhancing ferroelectric photovoltaic effect of BaTiO 3 by the lateral interface

2021 ◽  
Author(s):  
Lijing Wei ◽  
Changliang Li ◽  
Li Guan ◽  
Jianxin Guo
Keyword(s):  
Photovoltaic Effect
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