Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

2019 ◽  
Vol 216 (11) ◽  
pp. 1800964
Author(s):  
Alexey A. Serdobintsev ◽  
Ilya O. Kozhevnikov ◽  
Andrey V. Starodubov ◽  
Peter V. Ryabukho ◽  
Victor V. Galushka ◽  
...  
Keyword(s):  
Silicon Films ◽  
Absorption Layer ◽  
Near Ir ◽  
Ir Laser ◽  
Thin Silicon ◽  
Induced Crystallization

Synthesis of Lithography Free Micro-Nano Electron Field Emitters Using Pulsed KrF Laser Assisted Metal Induced Crystallization of Thin Silicon Films

2020 ◽  
Vol 204 (1) ◽  
pp. 121-132
Author(s):  
Mohammed Zubair Mohammed Shamim ◽  
Saydulla Persheyev ◽  
Monji Zaidi ◽  
Mohammed Usman ◽  
Mohammad Shiblee ◽  
...  
Keyword(s):  
Silicon Films ◽  
Metal Induced Crystallization ◽  
Field Emitters ◽  
Krf Laser ◽  
Electron Field ◽  
Thin Silicon ◽  
Induced Crystallization

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

A Solid-State Near-IR Laser for Spin-Exchange Optical Pumping

2020 ◽  
Vol 84 (11) ◽  
pp. 1359-1361
Author(s):  
A. A. Antipov ◽  
A. G. Putilov ◽  
A. V. Osipov ◽  
A. E. Shepelev
Keyword(s):  
Solid State ◽  
Optical Pumping ◽  
Spin Exchange ◽  
Spin Exchange Optical Pumping ◽  
Near Ir ◽  
Ir Laser

A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon

Optical properties of ultra-thin silicon films deposited on nanostructured anodic alumina surfaces

2014 ◽  
Vol 104 (8) ◽  
pp. 081119 ◽  
Author(s):  
Shu-Yi Wang ◽  
Diana-Andra Borca-Tasciuc ◽  
Deborah A. Kaminski
Keyword(s):  
Optical Properties ◽  
Anodic Alumina ◽  
Silicon Films ◽  
Thin Silicon

Automatic VIS- near IR laser refractometer

2004 ◽  
Vol 75 (10) ◽  
pp. 3342-3344 ◽  
Author(s):  
Y. Sarov ◽  
S. Sainov ◽  
I. Kostic ◽  
V. Sarova ◽  
S. Mitkov
Keyword(s):  
Near Ir ◽  
Ir Laser ◽  
Laser Refractometer
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