Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

2019 ◽  
Vol 216 (20) ◽  
pp. 1900098 ◽  
Author(s):  
Nicholas Blumenschein ◽  
Tania Paskova ◽  
John F. Muth
2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.


1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala

2019 ◽  
Vol 96 ◽  
pp. 109223 ◽  
Author(s):  
Sandeep Manandhar ◽  
Anil K. Battu ◽  
Cristian Orozco ◽  
C.V. Ramana

2019 ◽  
Vol 40 (1) ◽  
pp. 012806 ◽  
Author(s):  
Hui Hao ◽  
Xiao Chen ◽  
Zhengcheng Li ◽  
Yang Shen ◽  
Hu Wang ◽  
...  

2015 ◽  
Vol 8 (12) ◽  
pp. 121102 ◽  
Author(s):  
Stefan Müller ◽  
Holger von Wenckstern ◽  
Florian Schmidt ◽  
Daniel Splith ◽  
Friedrich-Leonhard Schein ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 8964-8970 ◽  
Author(s):  
Chiharu Kura ◽  
Yoshitaka Aoki ◽  
Etsushi Tsuji ◽  
Hiroki Habazaki ◽  
Manfred Martin

Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.


1990 ◽  
Vol 190 (1) ◽  
pp. 93-102 ◽  
Author(s):  
M. Fleischer ◽  
W. Hanrieder ◽  
H. Meixner

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