Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process
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Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.
2016 ◽
Vol 4
(10)
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pp. 2072-2078
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2011 ◽
Vol 375
(18)
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pp. 1898-1902
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2008 ◽
Vol 55-57
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pp. 285-288
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