Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Journal of Applied Physics ◽

10.1063/1.4974959 ◽

2017 ◽

Vol 121 (4) ◽

pp. 044504 ◽

Author(s):

Y. Li ◽

G. I. Ng ◽

S. Arulkumaran ◽

G. Ye ◽

Z. H. Liu ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Leakage Current Mechanism ◽

Current Mechanism

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

physica status solidi (a) ◽

10.1002/pssa.202000666 ◽

2021 ◽

pp. 2000666

Author(s):

Chi Sun ◽

Xiaoyu Ding ◽

Xing Wei ◽

Wenxin Tang ◽

Xiaodong Zhang ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Surface Etching ◽

Electron Mobility Transistors ◽

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On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate

Applied Physics Letters ◽

10.1063/1.4798257 ◽

2013 ◽

Vol 102 (11) ◽

pp. 113510 ◽

Author(s):

Ling Xia ◽

Allen Hanson ◽

Timothy Boles ◽

Donghyun Jin

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Silicon Substrate ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

ETRI Journal ◽

10.4218/etrij.2021-0070 ◽

2022 ◽

Author(s):

Ling‐Feng Mao

Keyword(s):

Temperature Dependence ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Positive Temperature ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.1571655 ◽

2003 ◽

Vol 82 (18) ◽

pp. 3110-3112 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Temperature Dependence ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5125 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5125-5126 ◽

Author(s):

Shinya Mizuno ◽

Yutaka Ohno ◽

Shigeru Kishimoto ◽

Koichi Maezawa ◽

Takashi Mizutani

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

Electronics Letters ◽

10.1049/el.2015.3430 ◽

2016 ◽

Vol 52 (2) ◽

pp. 157-159

Author(s):

S. Kim ◽

J.‐H. Ryou ◽

R.D. Dupuis ◽

H. Kim

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Reduction of the Gate Leakage Current in Binary-trench-insulatedGate AlGaN/GaN High-electron-mobility Transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.55.356 ◽

2009 ◽

Vol 55 (1) ◽

pp. 356-361 ◽

Author(s):

SuJin Kim ◽

DongHo Kim ◽

JaeMoo Kim ◽

KangMin Jung ◽

TaeGeun Kim ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Physics-based modeling of gate-leakage current in AlGaN/GaN high electron mobility transistors

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.1109/am-fpd.2016.7543649 ◽

2016 ◽

Author(s):

Xiaoyu Ma ◽

Fei Yu ◽

Wanling Deng ◽

Junkai Huang

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4891168 ◽

2014 ◽

Vol 32 (5) ◽

pp. 052201 ◽

Author(s):

Lu Liu ◽

Yuyin Xi ◽

Shihyun Ahn ◽

Fan Ren ◽

Brent P. Gila ◽

...

Keyword(s):

Leakage Current ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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