Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

2014 ◽  
Vol 32 (5) ◽  
pp. 052201 ◽  
Author(s):  
Lu Liu ◽  
Yuyin Xi ◽  
Shihyun Ahn ◽  
Fan Ren ◽  
Brent P. Gila ◽  
...  
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors

2002 ◽  
Vol 41 (Part 1, No. 8) ◽  
pp. 5125-5126 ◽  
Author(s):  
Shinya Mizuno ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
Takashi Mizutani
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
Sign in / Sign up

Export Citation Format

Share Document