Characterization of Al
X
Ga
1‐X
As/GaN High Electron Mobility Transistor (HEMT) Structures with Mercury Probe Capacitance‐Voltage and Current‐Voltage
2000 ◽
Vol 18
(3)
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pp. 1638
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2009 ◽
Vol 24
(3)
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pp. 035013
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2020 ◽
Vol 257
(4)
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pp. 1900589
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2008 ◽
Vol 28
(5-6)
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pp. 787-790
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1995 ◽
Vol 150
◽
pp. 1104-1107
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1997 ◽
Vol 26
(7)
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pp. 863-867
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