Characterization of AlGaN/GaN High Electron Mobility Transistor Grown on Silicon Carbide Devices with a Gate Length Lg = 0.15 μm

2011 ◽  
Vol 9 (6) ◽  
pp. 2178-2181 ◽  
Author(s):  
Malek Gassoumi ◽  
Mohamed Mongi Ben Salem ◽  
Salah Saadaoui ◽  
Walf Chikhaoui ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

2020 ◽  
Vol 257 (4) ◽  
pp. 1900589 ◽  
Author(s):  
Tadatoshi Ito ◽  
Ryota Sakamoto ◽  
Tatsuya Isono ◽  
Yongzhao Yao ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

2013 ◽  
Vol 529 ◽  
pp. 217-221 ◽  
Author(s):  
Ching-Hsiang Chan ◽  
Ching-Hwa Ho ◽  
Ming-Kai Chen ◽  
Yu-Shyan Lin ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Compressive Strain ◽  
High Electron Mobility Transistor ◽  
Optical Characterization ◽  
High Electron ◽  
High Electron Mobility

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

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