An experimental study on artificial intelligence‐based prediction of capacitance‐voltage parameters of polymer‐interface 6H‐SiC/MEH‐PPV/Al Schottky diodes

2022 ◽  
Author(s):  
Tamer Güzel ◽  
Andaç Batur Çolak
Keyword(s):  
Artificial Intelligence ◽  
Experimental Study ◽  
Schottky Diodes ◽  
Polymer Interface ◽  
Capacitance Voltage

Capacitance–voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes

2000 ◽  
Vol 9 (3-6) ◽  
pp. 413-416 ◽  
Author(s):  
R. Zeisel ◽  
C.E. Nebel ◽  
M. Stutzmann
Keyword(s):  
Schottky Diodes ◽  
Capacitance Voltage ◽  
And Diffusion

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Dissociation Between Users’ Explicit and Implicit Attitudes Toward Artificial Intelligence: An Experimental Study

2021 ◽  
pp. 1-9
Author(s):  
Valentina Fietta ◽  
Francesca Zecchinato ◽  
Brigida Di Stasi ◽  
Mirko Polato ◽  
Merylin Monaro
Keyword(s):  
Artificial Intelligence ◽  
Experimental Study ◽  
Implicit Attitudes

Comparison of Microwave ECR and RF Plasmas for Dry Etching of Single Crystal 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Flemish ◽  
K. Xie ◽  
W. Buchwald ◽  
L. Casas ◽  
J. H. Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Electron Cyclotron Resonance ◽  
Schottky Diodes ◽  
Substrate Bias ◽  
Rf Plasmas ◽  
Ecr Plasma ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Etch Rates

ABSTRACTElectron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of-100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.

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