Comparison of Microwave ECR and RF Plasmas for Dry Etching of Single Crystal 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Flemish ◽  
K. Xie ◽  
W. Buchwald ◽  
L. Casas ◽  
J. H. Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Electron Cyclotron Resonance ◽  
Schottky Diodes ◽  
Substrate Bias ◽  
Rf Plasmas ◽  
Ecr Plasma ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Etch Rates

ABSTRACTElectron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of-100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.

Dry Etching of InGaP and AlInP in CH4/H2/Ar

1996 ◽  
Vol 421 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. J. Santana ◽  
E. S. Lambers ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Flow ◽  
Flow Rates ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Rates ◽  
Ecr Plasma Etching

AbstractElectron Cyclotron Resonance (ECR) plasma etching with additional if-biasing produces etch rates ≥ 2,500Å/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AtlnP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ˜200Å from the surface relative to the RIE samples.

CH4 :H2 :Ar rf/ECR Plasma Etching of GaAs and InP

1991 ◽  
Vol 223 ◽  
Author(s):  
Victor. J. Law ◽  
S. G. Ingram ◽  
G. A. C. Jones ◽  
R. C. Grimwood ◽  
H. Royal
Keyword(s):  
Plasma Etching ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Kinetic Studies ◽  
High Electron Mobility Transistor ◽  
Rf Plasma ◽  
High Electron ◽  
Ecr Plasma ◽  
Etch Rates ◽  
Ecr Plasma Etching

ABSTRACTA comparative study of CH4 :H2 , and CH4 :H2 :Ar rf-plasma and microwave electron cyclotron resonance (ECR) plasma etching of GaAs and InP is presented. The study is in two parts;(i) Kinetic studies of GaAs and InP etch rates as a function of the constituent gas flow rates, applied rf and microwave powers, substrate temperature and position. The results indicate that CH4 :H2 :Ar ECR etching of GaAs is 10× more efficient in the utilisation of the CH4 precursor gas than rf-plasmas. However, the absolute etch rates are lower (70 nm min−1 for rf and 25 nm min−1 for rf biassed ECR-plasmas).The effect of etching conditions on InP morphology is also examined.(ii) The study of electrical “damage” in GaAs/AlGaAs high electron mobility transistor (HEMT) Hall bar structures, was investigated by ECR-plasma etching off the top GaAs capping layer. Results indicate that ECR-plasma etching with an rf-bias between 0V and −30V does not significantly effect the electrical characteristics of such devices at 300K, with some degredation at 1.2 K.

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

HI/H2 ECR Plasma Etching of III-V Semiconductors

1992 ◽  
Vol 268 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. Katz ◽  
F. Ren ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Dry Etching ◽  
Hydrogen Passivation ◽  
Near Surface ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Polymer Deposition ◽  
Etch Rates ◽  
Surface Morphologies

ABSTRACTHI/H2/Ar discharges are shown to be universal etchants for rn-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At loy dc self bia:s (-100V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000Å min−1 are possible for high HI percentages in the discharges, whereas rates greater than 1 Åm min−1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH4/H2/Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H2/Ar. Auger Electron Spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As i result, photoluminescence intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH4-based dry etching.

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures

2012 ◽  
Vol 717-720 ◽  
pp. 901-904 ◽  
Author(s):  
Lars Hiller ◽  
Thomas Stauden ◽  
Ricarda M. Kemper ◽  
Jörg K.N. Lindner ◽  
Donat J. As ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Electron Cyclotron Resonance ◽  
Inlet System ◽  
Mesa Structure ◽  
Ecr Plasma ◽  
Grain Sizes ◽  
Aspect Ratios ◽  
Mask Material ◽  
Gas Atmosphere ◽  
Etching Mask

Anisotropic etching processes for mesa structure formation using fluorinated plasma atmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic substrates with 10 µm thick 3C-SiC(100) grown on Si(100). To achieve reasonable etching rates, a special gas inlet system suitable for injecting SF6 into the high density downstream Ar ECR plasma was designed. The influence of the etching mask material on the sidewall morphology was investigated. Masking materials with small grain sizes are preferable to achieve a desired shape. The evolution of the mesa form was investigated in dependence on the gas composition, the applied bias, the pressure and the composition of the gas atmosphere. The achieved sidewall slope was 84.5 deg. The aspect ratios of the fabricated structures in the developed residue free ECR plasma etching process were between 5 and 10. Mesa structures aligned to [100] and [110] directions were fabricated.

Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer

1993 ◽  
Vol 320 ◽  
Author(s):  
A. Lauwers ◽  
A. Vercaemst ◽  
M. Van Hove ◽  
K. Kyllesbech Larsen ◽  
R. Verbeeck ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Low Temperature ◽  
Solid State Reaction ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Bimetallic Layer ◽  
Temperature Resistivity

ABSTRACTIn this paper the electrical properties of epitaxial CoSi2 on Si obtained by solid-state reaction of a Ti/Co bimetallic layer are investigated. Low temperature resistivity, magnetoresistance and Hall data are presented. The CoSi2ISi Schottky diodes are characterised by current - voltage and capacitance - voltage measurements at temperatures varying between - 100°C and 60°C.

Electronic Properties Of Defects Formed In n-Si During Sputter-Etching In An Ar Plasma

1996 ◽  
Vol 442 ◽  
Author(s):  
P. N. K. Deenapanray ◽  
F. D. Auret ◽  
C. Schutte ◽  
G. Myburg ◽  
W. E. Meyer ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Deep Level ◽  
High Energy ◽  
Barrier Heights ◽  
Opposite Trend ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Ar Plasma ◽  
Transient Spectroscopy ◽  
Sputter Etching

AbstractWe have employed current-voltage (IV), capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) techniques to characterise the defects induced in n-Si during RF sputter-etching in an Ar plasma. The reverse leakage current, at a bias of 1 V, of the Schottky barrier diodes fabricated on the etched samples was found to decrease with etch time reaching a minimum at 6 minutes and thereafter increased. The barrier heights followed the opposite trend. The plasma processing introduced six prominent deep levels below the conduction band of the substrate. A comparison with the defects induced during high energy (MeV) alpha-particle, proton and electron irradiation of the same material revealed that plasma-etching created the VO- and VP-centres, and V2-10. Some of the remaining sputter-etching-induced (SEI) defects have tentatively been related to those formed during either 1 keV He- or Ar-ion bombardment.

Sign in / Sign up

Export Citation Format

Share Document