Simple analytical expression for the hall coefficient of polycrystalline metal films at low magnetic field

1981 ◽  
Vol 68 (2) ◽  
pp. K171-K175 ◽  
Author(s):  
C. R. Pichard ◽  
C. R. Tellier ◽  
A. J. Tosser
Keyword(s):  
Magnetic Field ◽  
Hall Coefficient ◽  
Metal Films ◽  
Polycrystalline Metal ◽  
Simple Analytical Expression ◽  
Analytical Expression ◽  
Low Magnetic Field

HOMOGENIZATION OF THE MAGNETO-RESISTANCE IN DIMENSION TWO

2010 ◽  
Vol 20 (07) ◽  
pp. 1161-1177
Author(s):  
MARC BRIANE
Keyword(s):  
Magnetic Field ◽  
General Formula ◽  
Hall Coefficient ◽  
Periodic Case ◽  
Two Dimensional ◽  
Two Phase ◽  
Dissipation Energy ◽  
Rank One ◽  
Low Magnetic Field ◽  
Magneto Resistance

A general formula for the effective magneto-resistance in a two-dimensional heterogeneous conductor submitted to a low magnetic field is given through H-convergence. In the periodic case, it is proved that the dissipation energy due to the effective magneto-resistance is greater than or equal to the average of the energy due to the local magneto-resistance, and that the equality holds if and only if the local Hall coefficient is constant. This agrees with an anisotropic extension of the Kohler law in the framework of the ordinary magneto-resistance. The result is illustrated by the case of a two-phase rank-one laminate.

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

HYMU 80

Alloy Digest ◽  
1971 ◽  
Vol 20 (10) ◽  
Keyword(s):  
Magnetic Field ◽  
Fracture Toughness ◽  
Corrosion Resistance ◽  
Heat Treating ◽  
Initial Permeability ◽  
Nickel Iron ◽  
Technology Corporation ◽  
Carpenter Technology Corporation ◽  
Low Magnetic Field ◽  
Maximum Permeability

Abstract Carpenter HYMU 80 is an unoriented 80% nickel-iron-molybdenum alloy which offers extremely high initial permeability and maximum permeability with minimum hysteresis loss at low magnetic field strengths. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fracture toughness. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-5. Producer or source: Carpenter Technology Corporation. Originally published May 1953, revised October 1971.

Low magnetic field spin flops in giant magnetoresistance multilayers

1995 ◽  
Vol 148 (1-2) ◽  
pp. 329-330 ◽  
Author(s):  
H. Kano ◽  
A. Okabe ◽  
K. Kagawa ◽  
A. Suzuki ◽  
T. Yaoi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Giant Magnetoresistance ◽  
Low Magnetic Field

scholarly journals TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Double Quantum ◽  
Ballistic Regime ◽  
2D Electron Gas ◽  
Double Quantum Well ◽  
Liquid Transition ◽  
Low Magnetic Field

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

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