A novel approach to the charge transport through Au/p-CdTe schottky diodes

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.

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The effects of localized tail states on charge transport mechanisms in amorphous zinc tin oxide Schottky diodes

Semiconductor Science and Technology ◽

10.1088/1361-6641/aa95d2 ◽

2017 ◽

Vol 32 (12) ◽

pp. 12LT02 ◽

Cited By ~ 3

Author(s):

Youngbae Son ◽

Rebecca L Peterson

Keyword(s):

Charge Transport ◽

Tin Oxide ◽

Schottky Diodes ◽

Transport Mechanisms ◽

Zinc Tin Oxide

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What could be the Highest Hopping Mobility in Organic Thin-Film Transistors?

MRS Advances ◽

10.1557/adv.2016.477 ◽

2016 ◽

Vol 1 (38) ◽

pp. 2659-2664

Author(s):

Varsha Rani ◽

Akanksha Sharma ◽

Subhasis Ghosh

Keyword(s):

Thin Film ◽

Charge Transport ◽

Transport Properties ◽

Thin Film Transistors ◽

Weak Coupling ◽

Theoretical Study ◽

Schottky Diodes ◽

Organic Thin Film Transistors ◽

Electronic Coupling ◽

Organic Thin Film

ABSTRACTCharge transport properties of pentacene have been investigated by a joint experimental and theoretical study. The growth of pentacene on the substrates shows mainly two different polymorphic phases, a bulk phase and a thin-film phase. The thin-film phase is crucial for the charge transport in two-terminal and three-terminal devices such as organic Schottky diodes and organic thin film transistors, respectively. Experimentally, mobility in two-terminal devices is less by five orders of magnitude than that in three-terminal devices. We show here that this difference can be explained on the basis of strong electronic coupling between molecular dimers located in the ab-plane and relatively weak coupling between the planes (along the c-axis).

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Freeze Drying as a Novel Approach to Improve Charge Transport in Titanium Dioxide Nanorod Arrays

ChemElectroChem ◽

10.1002/celc.201700572 ◽

2017 ◽

Vol 4 (11) ◽

pp. 2783-2787 ◽

Cited By ~ 3

Author(s):

Peng Zhong ◽

Xinpeng Chen ◽

He Xi ◽

Yimin Lei ◽

Xiaohua Ma

Keyword(s):

Titanium Dioxide ◽

Charge Transport ◽

Freeze Drying ◽

Nanorod Arrays ◽

Novel Approach

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Broadband and Efficient Full Wave Rectenna for Wireless Energy

International Journal of Recent Technology and Engineering - 2 ◽

10.35940/ijrte.d6959.118419 ◽

2019 ◽

Vol 8 (4) ◽

pp. 395-399

Keyword(s):

Energy Transfer ◽

Patch Antenna ◽

Schottky Diodes ◽

Microstrip Patch Antenna ◽

Wireless Energy Transfer ◽

Ism Band ◽

Microstrip Patch ◽

Full Wave ◽

Novel Approach ◽

Half Wave

This paper presents a novel approach to realize a broadband full wave rectenna for wireless energy transfer at 2.45 GHz ISM band. The full wave rectenna structure is designed using a center shorted dual edge feed microstrip patch antenna and two Schottky diodes. This antenna is inherently broadband in nature and can provide differential voltage at its two feed points. An optimized full wave rectenna is fabricated and tested. The proposed rectenna provides more conversion efficiency than a rectenna with similar antenna and conventional half wave rectifier.

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Charge Transport Study in Thin Film Au-CdTe Schottky Diodes

10.1515/9783112480823-036 ◽

1988 ◽

pp. 297-304

Author(s):

D Kindl ◽

J Totjskova

Keyword(s):

Thin Film ◽

Charge Transport ◽

Schottky Diodes ◽

Transport Study

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Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe

Semiconductors ◽

10.1134/1.1944866 ◽

2005 ◽

Vol 39 (6) ◽

pp. 722 ◽

Cited By ~ 8

Author(s):

L. A. Kosyachenko

Keyword(s):

Charge Transport ◽

Schottky Diodes

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Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

Nanomaterials ◽

10.3390/nano10020297 ◽

2020 ◽

Vol 10 (2) ◽

pp. 297

Author(s):

Moonsang Lee ◽

Chang Wan Ahn ◽

Thi Kim Oanh Vu ◽

Hyun Uk Lee ◽

Yesul Jeong ◽

...

Keyword(s):

Charge Transport ◽

Point Defect ◽

Transport Mechanism ◽

Deep Level ◽

Schottky Diodes ◽

Schottky Contact ◽

Thermionic Emission ◽

Reverse Current ◽

Thermionic Field Emission ◽

Transient Spectroscopy

In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103–105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.

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