Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

2015 ◽  
Vol 252 (5) ◽  
pp. 1096-1103 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Blandine Alloing ◽  
Virginie Brändli ◽  
Denis Lefebvre ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
Systematic Study ◽  
Continuous Flow ◽  
Growth Conditions ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers

2016 ◽  
Vol 454 ◽  
pp. 71-81 ◽  
Author(s):  
C.H. Wu ◽  
P.Y. Lee ◽  
K.Y. Chen ◽  
Y.T. Tseng ◽  
Y.L. Wang ◽  
...  
Keyword(s):  
High Density ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth

2018 ◽  
Author(s):  
Matt Brubaker ◽  
Bryan Spann ◽  
Kristen Genter ◽  
Alexana Roshko ◽  
Paul Blanchard ◽  
...  
Keyword(s):  
Core Shell ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy

2017 ◽  
Author(s):  
K. Zhang ◽  
V. Ray ◽  
P. Herrera-Fierro ◽  
J. R. Sink ◽  
F. Toor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

2015 ◽  
Vol 9 (1) ◽  
pp. 015502 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Blandine Alloing ◽  
Virginie Brändli ◽  
Philippe Vennéguès ◽  
Mathieu Leroux ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Continuous Flow ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2318-2320 ◽  
Author(s):  
Shunfeng Li ◽  
Sönke Fündling ◽  
Xue Wang ◽  
Milena Erenburg ◽  
Mohamed Aid Mansur Al-Suleiman ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Rod Structures

scholarly journals Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125304 ◽  
Author(s):  
Kohei Chiba ◽  
Katsuhiro Tomioka ◽  
Akinobu Yoshida ◽  
Junichi Motohisa
Keyword(s):  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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