scholarly journals Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125304 ◽  
Author(s):  
Kohei Chiba ◽  
Katsuhiro Tomioka ◽  
Akinobu Yoshida ◽  
Junichi Motohisa
Keyword(s):  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy

2017 ◽  
Author(s):  
K. Zhang ◽  
V. Ray ◽  
P. Herrera-Fierro ◽  
J. R. Sink ◽  
F. Toor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

2015 ◽  
Vol 252 (5) ◽  
pp. 1096-1103 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Blandine Alloing ◽  
Virginie Brändli ◽  
Denis Lefebvre ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
Systematic Study ◽  
Continuous Flow ◽  
Growth Conditions ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers

2016 ◽  
Vol 454 ◽  
pp. 71-81 ◽  
Author(s):  
C.H. Wu ◽  
P.Y. Lee ◽  
K.Y. Chen ◽  
Y.T. Tseng ◽  
Y.L. Wang ◽  
...  
Keyword(s):  
High Density ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective area grown AlInGaN nanowire arrays with core–shell structures for photovoltaics on silicon

Nanoscale ◽  
2021 ◽  
Author(s):  
Renjie Wang ◽  
Shaobo Cheng ◽  
Srinivas Vanka ◽  
Gianluigi A. Botton ◽  
Zetian Mi
Keyword(s):  
Buffer Layer ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Shell Structures ◽  
Core Shell ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Selective Area ◽  
Area Growth ◽  
Photovoltaic Applications

By employing a conductive buffer layer, the selective area growth of close-packed AlInGaN core–shell nanowire array and its photovoltaic applications with higher efficiency and higher Voc are demonstrated on Si substrate.

Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates

2017 ◽  
Vol 460 ◽  
pp. 1-4 ◽  
Author(s):  
Xiaoye Wang ◽  
Wenyuan Yang ◽  
Baojun Wang ◽  
Xianghai Ji ◽  
Shengyong Xu ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth
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