Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2318-2320 ◽  
Author(s):  
Shunfeng Li ◽  
Sönke Fündling ◽  
Xue Wang ◽  
Milena Erenburg ◽  
Mohamed Aid Mansur Al-Suleiman ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Rod Structures

Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

2015 ◽  
Vol 252 (5) ◽  
pp. 1096-1103 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Blandine Alloing ◽  
Virginie Brändli ◽  
Denis Lefebvre ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
Systematic Study ◽  
Continuous Flow ◽  
Growth Conditions ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions

2003 ◽  
Vol 248 ◽  
pp. 390-394 ◽  
Author(s):  
J. Decobert ◽  
D. Herrati ◽  
V. Colson ◽  
D. Leclerc ◽  
L. Goldstein
Keyword(s):  
Growth Conditions ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth by Periodic Supply Molecular Beam Epitaxy

1998 ◽  
Vol 05 (03n04) ◽  
pp. 731-738 ◽  
Author(s):  
G. Bacchin ◽  
K. Tsunoda ◽  
T. Nishinaga
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Experimental Results ◽  
Epitaxial Layers ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective area growth (SAG) was studied by applying periodic supply epitaxy (PSE) to molecular beam epitaxy (MBE). Different growth conditions and PSE parameters were employed, and their influence on the degree of selectivity will be described in detail, The experimental results of the SAG of GaAs and AlGaAs on GaAs (001) and (111)B substrates patterned with a SiO 2 mask will be showed and discussed, The SAG of AlGaAs was found to be very difficult because AlGaAs polycrystalline islands that are formed on the mask require more energy to be decomposed due to the stronger Al–As bonds, Despite the difficulties in SAG by MBE, the PSE technique made it possible to grow selectively smooth epitaxial layers of GaAs and AlGaAs on both kinds of substrates.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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