Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

2018 ◽  
Vol 255 (5) ◽  
pp. 1700457 ◽  
Author(s):  
Sarah Blumenthal ◽  
Dirk Reuter ◽  
Donat J. As
2015 ◽  
Vol 425 ◽  
pp. 186-190 ◽  
Author(s):  
W.C. Fan ◽  
S.H. Huang ◽  
W.C. Chou ◽  
M.H. Tsou ◽  
C.S. Yang ◽  
...  

2011 ◽  
Vol 8 (5) ◽  
pp. 1495-1498 ◽  
Author(s):  
T. Schupp ◽  
T. Meisch ◽  
B. Neuschl ◽  
M. Feneberg ◽  
K. Thonke ◽  
...  

2001 ◽  
Vol 227-228 ◽  
pp. 1000-1004 ◽  
Author(s):  
P.B Joyce ◽  
T.J Krzyzewski ◽  
G.R Bell ◽  
T.S Jones ◽  
S Malik ◽  
...  

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.


2006 ◽  
Vol 45 (No. 26) ◽  
pp. L669-L672 ◽  
Author(s):  
Jay S. Brown ◽  
Pierre M. Petroff ◽  
Feng Wu ◽  
James S. Speck

2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document