Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 26 (2) ◽  
pp. 022001
Author(s):  
A V Katkov ◽  
Jim Chi ◽  
C C Wang ◽  
C Cheng
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Hydrogen Plasma

Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

2015 ◽  
Vol 425 ◽  
pp. 186-190 ◽  
Author(s):  
W.C. Fan ◽  
S.H. Huang ◽  
W.C. Chou ◽  
M.H. Tsou ◽  
C.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 1000-1004 ◽  
Author(s):  
P.B Joyce ◽  
T.J Krzyzewski ◽  
G.R Bell ◽  
T.S Jones ◽  
S Malik ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Size Composition ◽  
Rate Effects

scholarly journals Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Biaxial Strain ◽  
High Energy Electron ◽  
Inas Quantum Dots ◽  
Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

Quantum dots-templated growth of strain-relaxed GaN on a c -plane sapphire by radio-frequency molecular beam epitaxy

2012 ◽  
Vol 21 (10) ◽  
pp. 108101 ◽  
Author(s):  
Hao-Min Guo ◽  
Long Wen ◽  
Zhi-Fei Zhao ◽  
Shao-Jiang Bu ◽  
Xin-Hua Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Templated Growth

Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy

2006 ◽  
Vol 45 (No. 26) ◽  
pp. L669-L672 ◽  
Author(s):  
Jay S. Brown ◽  
Pierre M. Petroff ◽  
Feng Wu ◽  
James S. Speck
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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