Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

2015 ◽  
Vol 425 ◽  
pp. 186-190 ◽  
Author(s):  
W.C. Fan ◽  
S.H. Huang ◽  
W.C. Chou ◽  
M.H. Tsou ◽  
C.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 1000-1004 ◽  
Author(s):  
P.B Joyce ◽  
T.J Krzyzewski ◽  
G.R Bell ◽  
T.S Jones ◽  
S Malik ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Size Composition ◽  
Rate Effects

scholarly journals Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Biaxial Strain ◽  
High Energy Electron ◽  
Inas Quantum Dots ◽  
Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy

2006 ◽  
Vol 45 (No. 26) ◽  
pp. L669-L672 ◽  
Author(s):  
Jay S. Brown ◽  
Pierre M. Petroff ◽  
Feng Wu ◽  
James S. Speck
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Tim Michael Smeeton ◽  
Mathieu Sénès ◽  
Katherine L Smith ◽  
Stewart E Hooper ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Discrete Energy ◽  
Time Resolved ◽  
Transmission Electron ◽  
Z Contrast

ABSTRACTThe structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

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