The Hole Conductivity Prefactor and the Mobility Gap of a—Si:H and a—Ge:H

1991 ◽  
Vol 168 (2) ◽  
pp. K65-K68 ◽  
Author(s):  
T. Drüsedau
1975 ◽  
Vol 14 (9) ◽  
pp. 324-326 ◽  
Author(s):  
V. Dallacasa

1991 ◽  
Vol 13 (3) ◽  
pp. 273-280
Author(s):  
F. Gozzo ◽  
R. Murri ◽  
N. Pinto ◽  
L. Schiavulli

2005 ◽  
Vol 72 (7) ◽  
Author(s):  
Xin Wan ◽  
D. N. Sheng ◽  
E. H. Rezayi ◽  
Kun Yang ◽  
R. N. Bhatt ◽  
...  

1998 ◽  
Vol 33 (4) ◽  
pp. 611-618 ◽  
Author(s):  
S.C Kuiry ◽  
S.K Roy ◽  
S.K Bose

2019 ◽  
Vol 20 (2) ◽  
pp. 144-148
Author(s):  
S. Solodin ◽  
Ye. Nikoniuk ◽  
G. Rarenko ◽  
P. Fochuk

Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).


2021 ◽  
pp. cmaj.210132
Author(s):  
Kevin A. Brown ◽  
Jean-Paul R. Soucy ◽  
Sarah A. Buchan ◽  
Shelby L. Sturrock ◽  
Isha Berry ◽  
...  
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