Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
D. J. As ◽  
U. Köhler ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Rf Plasma ◽  
Spectral Position ◽  
Carbon Doped ◽  
Photoluminescence Line ◽  
Cubic Gan

AbstractThe optical properties of Carbon doped cubic GaN epilayers have been investigated by temperature and intensity dependent photoluminescence measurements. RF-plasma assisted molecular beam epitaxy equipped with an e-beam-evaporation source for carbon doping is used to grow the cubic GaN layers on GaAs (001) substrates. With increasing Carbon flux a new photoluminescence line at 3.08 eV appeared at 2K. This line is attributed to a donor acceptor transistion, which involves the shallow CN acceptor. From the spectral position the binding energy of the C acceptor is estimated to be about EC = 0.215 eV. Our experiments demonstrate that C indeed introduces a shallow acceptor in cubic GaN with an acceptor binding energy, which is about 15 meV lower than that observed for the Mg acceptor in cubic GaN. However, at high C fluxes a deep red luminescence band appeared at 2.1 eV, indicating compensation effects.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

Optical properties of bulk-like GaN nanorods grown on Si(111) substrates by rf-plasma assisted molecular beam epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2211-2213
Author(s):  
Young S. Park ◽  
T. W. Kang ◽  
Hyunsik Im ◽  
Mark J. Holmes ◽  
Robert A. Taylor
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FG07 ◽  
Author(s):  
Hiroto Sekiguchi ◽  
Satoshi Nishikawa ◽  
Tomohiko Imanishi ◽  
Kohei Ozaki ◽  
Keisuke Yamane ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Structural And Optical Properties ◽  
Si Substrates

Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy

1998 ◽  
Vol 73 (13) ◽  
pp. 1835-1837 ◽  
Author(s):  
D. J. As ◽  
T. Simonsmeier ◽  
B. Schöttker ◽  
T. Frey ◽  
D. Schikora ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan

scholarly journals Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

2002 ◽  
Vol 719 ◽  
Author(s):  
Rob Armitage ◽  
Qing Yang ◽  
Henning Feick ◽  
Yeonjoon Park ◽  
Eicke R. Weber
Keyword(s):  
Optical Properties ◽  
Carbon Tetrachloride ◽  
Molecular Beam Epitaxy ◽  
Carbon Content ◽  
Molecular Beam ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Heavily Doped ◽  
P Type ◽  
Dopant Source

AbstractCarbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (<5×1020 cm-3) were actually ntype rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow (∼6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

scholarly journals Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma-Assisted Molecular Beam Epitaxy

2003 ◽  
Vol 0 (1) ◽  
pp. 170-174
Author(s):  
A. Shigemori ◽  
J. Shike ◽  
K. Takahashi ◽  
K. Ishida ◽  
R. Kimura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Rf Plasma ◽  
Cubic Gan ◽  
Gan Film

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

2018 ◽  
Vol 255 (5) ◽  
pp. 1700457 ◽  
Author(s):  
Sarah Blumenthal ◽  
Dirk Reuter ◽  
Donat J. As
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan
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