Switching characteristics of ZnO based transparent resistive random access memory devices grown by pulsed laser deposition

2010 ◽  
Vol 7 (6) ◽  
pp. 1718-1720 ◽  
Author(s):  
Pankaj Misra ◽  
Amit K. Das ◽  
Lalit M. Kukreja
Keyword(s):  
Pulsed Laser Deposition ◽  
Random Access ◽  
Pulsed Laser ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Laser Deposition ◽  
Memory Devices ◽  
Access Memory ◽  
Switching Characteristics

scholarly journals Resistive switching of the HfOx/HfO2 bilayer heterostructure and its transmission characteristics as a synapse

RSC Advances ◽  
2018 ◽  
Vol 8 (73) ◽  
pp. 41884-41891 ◽  
Author(s):  
Tingting Tan ◽  
Yihang Du ◽  
Ai Cao ◽  
Yaling Sun ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Bilayer Structure ◽  
Transmission Characteristics ◽  
Access Memory ◽  
Switching Characteristics

In this work, HfOx/HfO2 homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated.

scholarly journals Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

2015 ◽  
Vol 51 (44) ◽  
pp. 9173-9176 ◽  
Author(s):  
Sung Pyo Park ◽  
Doo Hyun Yoon ◽  
Young Jun Tak ◽  
Heesoo Lee ◽  
Hyun Jae Kim
Keyword(s):  
Phase Transition ◽  
Hydrogen Peroxide ◽  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Switching Characteristics

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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