Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC(0001)

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2094-2096 ◽  
Author(s):  
Hironori Okumura ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Molecular Beam ◽  
Layer Growth ◽  
Threading Dislocation ◽  
Layer By Layer ◽  
Initial Layer ◽  
Threading Dislocation Density

scholarly journals Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy

2019 ◽  
Vol 9 (9) ◽  
pp. 1772
Author(s):  
Gu ◽  
Zhao ◽  
Ye ◽  
Deng ◽  
Lu
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Dislocation Density ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Typical Strain

Single-crystalline Si1−xGex thin films on Si (100) with low threading dislocation density (TDD) are highly desired for semiconductor industrials. It is challenging to suppress the TDD since there is a large mismatch (4.2%) between Ge and Si—it typically needs 106–107/cm2 TDD for strain relaxation, which could, however, cause device leakage under high voltage. Here, we grew Si1−xGex (x = 0.5–1) films on Si (001) by low temperature molecular beam epitaxy (LT-MBE) at 200 °C, which is much lower than the typical temperature of 450–600 °C. Encouragingly, the Si1−xGex thin films grown by LT-MBE have shown a dramatically reduced TDD down to the 103–104/cm2 level. Using transmission electron microscopy (TEM) with atomic resolution, we discovered a non-typical strain relaxation mechanism for epitaxial films grown by LT-MBE. There are multiple-layered structures being introduced along out-of-plane-direction during film growth, effectively relaxing the large strain through local shearing and subsequently leading to an order of magnitude lower TDD. We presented a model for the non-typical strain relaxation mechanism for Si1−xGex films grown on Si (001) by LT-MBE.

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3900-3903 ◽  
Author(s):  
Takayuki Ishibashi ◽  
Yoshitaka Okada ◽  
Shin Yokoyama ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Superconducting Films ◽  
Layer Growth ◽  
Layer By Layer

Molecular layer-by-layer growth of SrTiO3 and BaTiO3 films by laser molecular beam epitaxy

1996 ◽  
Vol 41 (1) ◽  
pp. 134-137 ◽  
Author(s):  
T. Maeda ◽  
G.H. Lee ◽  
T. Ohnishi ◽  
M. Kawasaki ◽  
M. Yoshimoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Layer ◽  
Layer Growth ◽  
Layer By Layer ◽  
Laser Molecular Beam Epitaxy

Layer by Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy

1991 ◽  
Author(s):  
Takayuki Ishibashi ◽  
Yoshitaka Okada ◽  
Shin Yokoyama ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Growth ◽  
Layer By Layer

Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates

1990 ◽  
Vol 65 (6) ◽  
pp. 733-736 ◽  
Author(s):  
Ralf Kunkel ◽  
Bene Poelsema ◽  
Laurens K. Verheij ◽  
George Comsa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Growth ◽  
Layer By Layer ◽  
Metal Substrates ◽  
Metal On Metal
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