Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3900-3903 ◽  
Author(s):  
Takayuki Ishibashi ◽  
Yoshitaka Okada ◽  
Shin Yokoyama ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Superconducting Films ◽  
Layer Growth ◽  
Layer By Layer

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

Molecular layer-by-layer growth of SrTiO3 and BaTiO3 films by laser molecular beam epitaxy

1996 ◽  
Vol 41 (1) ◽  
pp. 134-137 ◽  
Author(s):  
T. Maeda ◽  
G.H. Lee ◽  
T. Ohnishi ◽  
M. Kawasaki ◽  
M. Yoshimoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Layer ◽  
Layer Growth ◽  
Layer By Layer ◽  
Laser Molecular Beam Epitaxy

Layer by Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy

1991 ◽  
Author(s):  
Takayuki Ishibashi ◽  
Yoshitaka Okada ◽  
Shin Yokoyama ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Growth ◽  
Layer By Layer

Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates

1990 ◽  
Vol 65 (6) ◽  
pp. 733-736 ◽  
Author(s):  
Ralf Kunkel ◽  
Bene Poelsema ◽  
Laurens K. Verheij ◽  
George Comsa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Growth ◽  
Layer By Layer ◽  
Metal Substrates ◽  
Metal On Metal

Suppression of Island Formation During Initial Stages of Ge/Si(100) Growth by Ion-Assisted Molecular Beam Epitaxy

1992 ◽  
Vol 268 ◽  
Author(s):  
C.J. Tsai ◽  
H.A. Atwater
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Elastic Stability ◽  
Kinetic Mechanism ◽  
Layer Growth ◽  
Layer By Layer ◽  
Island Formation ◽  
Defect Generation ◽  
Linear Elastic ◽  
Amplitude Fluctuations

ABSTRACTWe have observed a suppression of island formation and an increase in the thickness limit for layer-by-layer growth of Ge on Si (100) by ion-assisted molecular beam epitaxy. Island suppression is observed both for ion energies at which surface defect generation dominates bulk defect generation and at which the majority of defects generated are bulk defects. This experiment, in conjunction with results of a linear elastic stability model for islanding, reveals that the kinetic mechanism for the suppression of island formation via ion bombardment is the reduction of surface amplitude fluctuations during the early stages of growth.

scholarly journals Damping of Oscillations in Layer-by-Layer Growth

1997 ◽  
Vol 11 (31) ◽  
pp. 3621-3634 ◽  
Author(s):  
H. Kallabis ◽  
L. Brendel ◽  
J. Krug ◽  
D. E. WOLF
Keyword(s):  
Molecular Beam Epitaxy ◽  
Computer Simulations ◽  
Power Law ◽  
Coherence Length ◽  
Molecular Beam ◽  
Diffusion Length ◽  
Growth Conditions ◽  
Layer Growth ◽  
Layer By Layer ◽  
Theoretical Results

We present a theory for the damping of layer-by-layer growth oscillations in molecular beam epitaxy. The surface becomes rough on distances larger than a layer coherence length which is substantially larger than the diffusion length. The damping time can be calculated by a comparison of the competing roughening and smoothening mechanisms. The dependence on the growth conditions, temperature and deposition rate, is characterized to be a power law. The theoretical results are confirmed by computer simulations.

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