In this work, Ni films with the thickness of 50[Formula: see text]nm were deposited on (110) silicon substrate by electron beam evaporation at the temperature of 125[Formula: see text]C, 300[Formula: see text]C and 500[Formula: see text]C. Graphene was prepared on Ni films by PECVD to study the effect of Ni film structure and surface morphology on the graphene grown by PECVD. The result shows that the particle size and surface roughness of Ni film increase, as the temperature of substrate go up. The Ni film deposited at 125[Formula: see text]C exhibits amorphous state, and the Ni films deposited at 300[Formula: see text]C and 500[Formula: see text]C exhibit (111) microcrystal structure. The graphene grown on the microcrystalline Ni film deposited at 300[Formula: see text]C is the bilayer structure with less defects and uniform morphology. The graphene prepared on the microcrystalline Ni film deposited at 500[Formula: see text]C has more defects, layers and obvious plane undulation. The analysis indicates that microcrystalline Ni film deposited at 300[Formula: see text]C can be used by PECVD at low temperature to prepare a bilayer graphene with less defects and uniform morphology.