Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMT

2014 ◽  
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Smooth Surface ◽  
Gan Hemt

Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMT

2014 ◽  
Vol 61 (4) ◽  
pp. 329-336
Author(s):  
Y.-Y. Wong ◽  
E. Y. Chang ◽  
Y.-K. Chen ◽  
S. C. Liu ◽  
Y.-C. Lin ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Smooth Surface ◽  
Gan Hemt

scholarly journals Низкотемпературные омические контакты на основе Ta/Al к гетероэпитаксиальным структурам AlGaN/GaN на кремниевых подложках

2019 ◽  
Vol 53 (2) ◽  
pp. 249
Author(s):  
Е.В. Ерофеев ◽  
И.В. Федин ◽  
В.В. Федина ◽  
А.П. Фазлеев
Keyword(s):  
Low Temperature ◽  
Surface Morphology ◽  
Contact Resistance ◽  
Contact Area ◽  
Ohmic Contact ◽  
Smooth Surface ◽  
Ohmic Contacts ◽  
Nitrogen Atmosphere ◽  
Silicon Substrates ◽  
20 Nm

AbstractThe formation features of a low-temperature Ta/Al-based ohmic contact to Al_0.25Ga_0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at T = 550°C in a nitrogen atmosphere.

Laser annealed ohmic contact to n+-GaAs

1983 ◽  
Vol 61 (8) ◽  
pp. 1218-1221 ◽  
Author(s):  
P. Sircar
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Excimer Laser ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Furnace Annealing ◽  
Gaas Substrates ◽  
Thin Nickel ◽  
Lower Contact

Ohmic contacts were made on n+-GaAs substrates by evaporating a gold–germanium eutectic film with or without a thin nickel overlayer and then alloying these samples either in a furnace or by means of an excimer laser. It is found that laser annealing gives a better surface morphology and a lower contact resistance than furnace annealing.

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

2010 ◽  
Vol 54 (6) ◽  
pp. 613-615 ◽  
Author(s):  
D.A. Deen ◽  
D.F. Storm ◽  
D.S. Katzer ◽  
D.J. Meyer ◽  
S.C. Binari
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Barrier Thickness ◽  
Gan Hemt

Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN

2005 ◽  
Vol 892 ◽  
Author(s):  
Nobuyuki Ito ◽  
Akira Suzuki ◽  
Mitsunori Kawamura ◽  
Kazuki Nomoto ◽  
Takeshi Kasai ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Smooth Surface ◽  
Surface Region ◽  
Specific Contact Resistance ◽  
Uniform Structure ◽  
Electrical Characteristics ◽  
High Impurity ◽  
Specific Contact ◽  
High Impurity Concentration

AbstractTi/Al ohmic contact with an extremely low specific contact resistance has been formed by the deposition of Ti and Al films on Si+ lanted GaN. The ohmic contact formed by annealing at 600 o C of Ti film with a thickness of 50 nm and Al film with a thickness of 200 nm reveals the good smooth surface and uniform structure as compare to those of contacts formed above 700 °C, which is correlated to whether the Al-Ti alloy is melted during the annealing of ohmic contact or not. The specific contact resistance of 2 × 10-6Ω-cm2 is obtained for Si+ implanted GaN with a dose of 5 × 1013 cm-2. As Si ion dose increases to 5 × 1014 /cm2, the specific contact resistance is reduced to 2 × 10-8 Ω-cm2. It is revealed that the selective doping at high impurity concentration in the surface region by Si+ implantation is useful to reduce the contact resistance for Ti/Al contact to GaN.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Direct and quantitative understanding of the non-Ohmic contact resistance in organic and oxide thin-film transistors

2015 ◽  
Vol 27 ◽  
pp. 253-258 ◽  
Author(s):  
Chuan Liu ◽  
Takeo Minari ◽  
Yong Xu ◽  
Bo-ru Yang ◽  
Hui-Xuan Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Quantitative Understanding
Sign in / Sign up

Export Citation Format

Share Document