Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate

2021 ◽  
pp. 114821
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Electrical Properties ◽  
Silicon Substrate ◽  
Gan Hemt

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD11 ◽  
Author(s):  
Lars Heuken ◽  
Muhammad Alshahed ◽  
Alessandro Ottaviani ◽  
Mohammed Alomari ◽  
Dirk Fahle ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Conduction Mechanisms

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

2012 ◽  
Vol 217-219 ◽  
pp. 2393-2396 ◽  
Author(s):  
Han Guo ◽  
Wu Tang ◽  
Wei Zhou ◽  
Chi Ming Li
Keyword(s):  
Electrical Properties ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Gan Hemt ◽  
Cap Layer ◽  
Dimensional Electron Gas

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

About the Electrical and Structural Properties of Erbium Thermally Diffused in Single Crystal Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
S. Binetti ◽  
M. Acciarri ◽  
I. Gelmi ◽  
S. Pizzini
Keyword(s):  
Electrical Properties ◽  
Chemical Analysis ◽  
Silicon Substrate ◽  
Silica Glass ◽  
Single Crystal Silicon ◽  
Auger Spectroscopy ◽  
Erbium Oxide ◽  
Erbium Doping ◽  
Crystal Silicon ◽  
Erbium Doped

AbstractHaving preliminary confirmed the possibility of erbium doping by thermal diffusion, we have used this process to introduce erbium into a silicon substrate from metallic erbium or erbium oxide sources. Diffusion experiments were carried out at 1050, 1200 and 1250°C. The Er:Si diffused samples were investigated using four probe resistivity and thermopower techniques for the measure of the concentration and type of carriers, SIMS and Auger spectroscopy for chemical analysis of the diffused layers and photoluminescence (PL) measurements at temperatures ranging from 2 to 298 K for the detection of optical activity. None of the samples prepared presented measurable PL at 2 K, except for one single sample on top of which was deposited an erbium doped silica glass. The electrical properties, instead, were deeply influenced by doping, indicating the formation of both donor and acceptors.

Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

2011 ◽  
Vol 9 (3-4) ◽  
pp. 473-475 ◽  
Author(s):  
Xueliang Zhu ◽  
Jun Ma ◽  
Tongde Huang ◽  
Ming Li ◽  
Ka Ming Wong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Silicon Substrate ◽  
Gan Hemt
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