Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor

physica status solidi (c) ◽

10.1002/pssc.201300179 ◽

2014 ◽

Vol 11 (3-4) ◽

pp. 844-847 ◽

Author(s):

Raphael Brown ◽

Abdullah Al-Khalidi ◽

Douglas Macfarlane ◽

Sanna Taking ◽

Gary Ternent ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor

Solid-State Electronics ◽

10.1016/j.sse.2010.12.006 ◽

2011 ◽

Vol 57 (1) ◽

pp. 80-82 ◽

Author(s):

Kuan-Wei Lee ◽

Hsien-Cheng Lin ◽

Cheng-Chieh Wu ◽

Fang-Ming Lee ◽

Yeong-Her Wang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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Enhancement-Mode Metal-Oxide-Semiconductor Metamorphic High-Electron-Mobility Transistor

ECS Meeting Abstracts ◽

10.1149/ma2013-02/23/1848 ◽

2013 ◽

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2013314 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1943 ◽

Author(s):

Chin-Chuan Cheng ◽

Yan-Ying Tsai ◽

Kun-Wei Lin ◽

Huey-Ing Chen ◽

Wei-Hsi Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Hydrogen Sensing ◽

Sensing Characteristics

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Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

IEEE Electron Device Letters ◽

10.1109/led.2015.2489228 ◽

2015 ◽

Vol 36 (12) ◽

pp. 1287-1290 ◽

Author(s):

Jin Wei ◽

Shenghou Liu ◽

Baikui Li ◽

Xi Tang ◽

Yunyou Lu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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LG = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2619 ◽

2019 ◽

Vol 14 (8) ◽

pp. 1133-1142 ◽

Author(s):

J. Ajayan ◽

D. Nirmal ◽

P. Mohankumar ◽

L. Arivazhagan ◽

M. Saravanan ◽

...

Keyword(s):

Electron Mobility ◽

Gaas Substrate ◽

High Performance ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

AIP Advances ◽

10.1063/1.5022029 ◽

2018 ◽

Vol 8 (4) ◽

pp. 045014 ◽

Author(s):

Ching-Ting Lee ◽

Chun-Chi Wang

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Numerical simulation of metal-oxide-semiconductor metamorphic high-electron-mobility transistor

2013 International Symposium on Next-Generation Electronics ◽

10.1109/isne.2013.6512366 ◽

2013 ◽

Author(s):

Jung-Sheng Huang ◽

Kuan-Wei Lee ◽

Po-Yu Lin ◽

Yu-Hsiang Tseng ◽

Chih-Hung Tu ◽

...

Keyword(s):

Numerical Simulation ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.1861122 ◽

2005 ◽

Vol 86 (6) ◽

pp. 063501 ◽

Author(s):

P. D. Ye ◽

B. Yang ◽

K. K. Ng ◽

J. Bude ◽

G. D. Wilk ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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