Numerical simulation of metal-oxide-semiconductor metamorphic high-electron-mobility transistor

2013 International Symposium on Next-Generation Electronics ◽

10.1109/isne.2013.6512366 ◽

2013 ◽

Author(s):

Jung-Sheng Huang ◽

Kuan-Wei Lee ◽

Po-Yu Lin ◽

Yu-Hsiang Tseng ◽

Chih-Hung Tu ◽

...

Keyword(s):

Numerical Simulation ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2013314 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1943 ◽

Author(s):

Chin-Chuan Cheng ◽

Yan-Ying Tsai ◽

Kun-Wei Lin ◽

Huey-Ing Chen ◽

Wei-Hsi Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Hydrogen Sensing ◽

Sensing Characteristics

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Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

IEEE Electron Device Letters ◽

10.1109/led.2015.2489228 ◽

2015 ◽

Vol 36 (12) ◽

pp. 1287-1290 ◽

Author(s):

Jin Wei ◽

Shenghou Liu ◽

Baikui Li ◽

Xi Tang ◽

Yunyou Lu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.1861122 ◽

2005 ◽

Vol 86 (6) ◽

pp. 063501 ◽

Author(s):

P. D. Ye ◽

B. Yang ◽

K. K. Ng ◽

J. Bude ◽

G. D. Wilk ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor

Solid-State Electronics ◽

10.1016/j.sse.2010.12.006 ◽

2011 ◽

Vol 57 (1) ◽

pp. 80-82 ◽

Author(s):

Kuan-Wei Lee ◽

Hsien-Cheng Lin ◽

Cheng-Chieh Wu ◽

Fang-Ming Lee ◽

Yeong-Her Wang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.1174 ◽

2005 ◽

Vol 44 (3) ◽

pp. 1174-1180 ◽

Author(s):

Narayan Chandra Paul ◽

Kazuki Nakamura ◽

Hiroki Seto ◽

Koichi Iiyama ◽

Saburo Takamiya

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2015.0332 ◽

2016 ◽

Vol 10 (5) ◽

pp. 423-432 ◽

Author(s):

Kanjalochan Jena ◽

Raghunandan Swain ◽

Trupti Ranjan Lenka

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Lattice Matched

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Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm

Applied Physics Express ◽

10.1143/apex.5.104201 ◽

2012 ◽

Vol 5 (10) ◽

pp. 104201 ◽

Author(s):

Xiuju Zhou ◽

Qiang Li ◽

Chak Wah Tang ◽

Kei May Lau

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility

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Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor

physica status solidi (c) ◽

10.1002/pssc.201300179 ◽

2014 ◽

Vol 11 (3-4) ◽

pp. 844-847 ◽

Author(s):

Raphael Brown ◽

Abdullah Al-Khalidi ◽

Douglas Macfarlane ◽

Sanna Taking ◽

Gary Ternent ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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