High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors
1999 ◽
Vol 38
(Part 1, No. 2B)
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pp. 1019-1021
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Keyword(s):
Group V
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2013 ◽
Vol 366
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pp. 35-38
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Keyword(s):
2011 ◽
Vol 50
(9)
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pp. 095502
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Keyword(s):
Keyword(s):
2003 ◽
Vol 42
(Part 1, No. 8)
◽
pp. 4913-4918
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Keyword(s):
2004 ◽
Vol 272
(1-4)
◽
pp. 438-443
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2008 ◽
Vol 40
(6)
◽
pp. 2204-2206
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2011 ◽
Vol 40
(8)
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pp. 1790-1794
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Keyword(s):