scholarly journals The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (Adv. Quantum Technol. 2/2018)

2018 ◽  
Vol 1 (2) ◽  
pp. 1870021 ◽  
Author(s):  
Tom Peach ◽  
Kevin Homewood ◽  
Manon Lourenco ◽  
Mark Hughes ◽  
Kaymar Saeedi ◽  
...  
Keyword(s):  
Hyperfine Structure ◽  
Annealing Conditions ◽  
Lattice Damage ◽  
Ion Implanted

scholarly journals The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon

2018 ◽  
Vol 1 (2) ◽  
pp. 1800038 ◽  
Author(s):  
Tom Peach ◽  
Kevin Homewood ◽  
Manon Lourenco ◽  
Mark Hughes ◽  
Kaymar Saeedi ◽  
...  
Keyword(s):  
Hyperfine Structure ◽  
Annealing Conditions ◽  
Lattice Damage ◽  
Ion Implanted

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 713-716 ◽  
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Depth Distribution ◽  
Electrical Activation ◽  
Extended Defects ◽  
Capping Layer ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Lattice Damage ◽  
Reduced Surface

This paper reports on the electrical activation and structural analysis of Al implanted 4H-SiC. The evolution of the implant damage during high temperature (1650 – 1700 °C) annealing results in the presence of extended defects and precipitates, whose density and depth distribution in the implanted sheet was accurately studied for two different ion fluences (1.31014 and 1.31015 cm-2) by transmission electron microscopy. Furthermore, the profiles of electrically active Al were determined by scanning capacitance microscopy. Only a limited electrical activation (10%) was measured for both fluences in the samples annealed without a capping layer. The use of a graphite capping layer to protect the surface during annealing showed a beneficial effect, yielding both a reduced surface roughness and an increased electrical activation (20% for the highest fluence and 30% for the lowest one) with respect to samples annealed without the capping layer.

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Effect of intrinsic impurities and annealing conditions on dislocation-related luminescence in self-ion-implanted Si

2016 ◽  
Vol 13 (10-12) ◽  
pp. 937-939 ◽  
Author(s):  
Dmitry Korolev ◽  
Alexey Mikhaylov ◽  
Alexey Belov ◽  
David Tetelbaum
Keyword(s):  
Annealing Conditions ◽  
Dislocation Related Luminescence ◽  
Ion Implanted

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

2002 ◽  
Vol 717 ◽  
Author(s):  
Fuccio Cristiano ◽  
Benjamin Colombeau ◽  
Bernadette de Mauduit ◽  
Caroline Bonafos ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Thermal Evolution ◽  
Extensive Study ◽  
Extended Defects ◽  
Experimental Conditions ◽  
Annealing Conditions ◽  
Physically Based ◽  
Free Interstitial ◽  
Extrinsic Defects ◽  
Ion Implanted

AbstractWe present an extensive study of the thermal evolution of the extended defects found in ion implanted Si as a function of annealing conditions. We will first review their structure and energetics and show that the defect kinetics can be described by an Ostwald ripening process whereby the defects exchange Si atoms and evolve in size and type to minimise their formation energy. Finally, we will present a physically based model to predict the evolution of extrinsic defects during annealing through the calculation of defect densities, size distributions, number of clustered interstitials and free-interstitial supersaturation. We will show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantation energies.

Electroreflectance measurements of lattice damage in ion implanted GaAs

1976 ◽  
Vol 47 (7) ◽  
pp. 3094-3098 ◽  
Author(s):  
Wayne J. Anderson ◽  
Y. S. Park
Keyword(s):  
Lattice Damage ◽  
Ion Implanted

Phase Formation of Platinum Silicides Formed by Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Nader M. Kalkhoran ◽  
F. Namavar ◽  
D. Perry ◽  
E. Cortesi
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
Silicide Phase ◽  
Substrate Orientation ◽  
Platinum Silicide ◽  
Annealing Conditions ◽  
Ion Implanted

ABSTRACTWe have studied the formation of platinum silicide layers by ion implantation and annealing, and have determined the dependence of platinum silicide phase formation on ion implantation conditions and substrate orientation. The results indicate that in most cases, the ion implanted layer consists of PtSi phase. However, depending on the implantation and annealing conditions and substrate orientation, other phases, including Pt2Si, Pt3Si, and Pt12Si5, as well as Si and Pt microcrystals, also form.

Transient Annealing of Ion-Implanted Silicon Using A Scanning IR Line Source

1982 ◽  
Vol 13 ◽  
Author(s):  
Y.S. Liu ◽  
H.E. Cline ◽  
G.E. Possin ◽  
H.G. Parks ◽  
W. Katz
Keyword(s):  
Line Source ◽  
Laser Annealing ◽  
Thermal Conditions ◽  
Alternative Methods ◽  
High Dose ◽  
Light Sources ◽  
Incoherent Light ◽  
Annealing Conditions ◽  
Transient Thermal ◽  
Ion Implanted

ABSTRACTRecent interest in finding an efficient method for transient annealing of ion-implanted silicon has led to studies of various rapid annealing schemes such as graphite heaters and high intensity incoherent light sources as alternative methods to laser annealing. In this paper, we describe a recent study of transient annealing of ion-implanted silicon using a scanning IR line source created by a single tungsten filament enclosed in a quartz envelope. Various dopants (B+, P+ and As+) with fluences of 1014 to 1016 ions/cm2 were implanted and annealed under both transient and steady-state thermal conditions. Dopant depth distributions were analyzed using the SIMS technique. Sheet resistance measurements indicated that almost 100% activations of the implanted dopants were achieved. Sensitivities of dopant activation to transient annealing conditions were studied as a function of dopant concentrations, and high-dose As- and B-implanted samples were found to be sensitive to transient thermal cycle, particularly to the peak temperature. Recrystallization was studied with Rutherford backscattering spectroscopy using 2 Mev He+ ions.

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