Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

2002 ◽  
Vol 717 ◽  
Author(s):  
Fuccio Cristiano ◽  
Benjamin Colombeau ◽  
Bernadette de Mauduit ◽  
Caroline Bonafos ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Thermal Evolution ◽  
Extensive Study ◽  
Extended Defects ◽  
Experimental Conditions ◽  
Annealing Conditions ◽  
Physically Based ◽  
Free Interstitial ◽  
Extrinsic Defects ◽  
Ion Implanted

AbstractWe present an extensive study of the thermal evolution of the extended defects found in ion implanted Si as a function of annealing conditions. We will first review their structure and energetics and show that the defect kinetics can be described by an Ostwald ripening process whereby the defects exchange Si atoms and evolve in size and type to minimise their formation energy. Finally, we will present a physically based model to predict the evolution of extrinsic defects during annealing through the calculation of defect densities, size distributions, number of clustered interstitials and free-interstitial supersaturation. We will show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantation energies.

A Physically Based Modeling of Boron TED in Amorphised Si

2000 ◽  
Vol 610 ◽  
Author(s):  
Evelyne Lampin ◽  
Vincent Senez ◽  
Alain Claveriel
Keyword(s):  
Ostwald Ripening ◽  
Physically Based Modeling ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Experimental Conditions ◽  
Physically Based ◽  
Free Interstitial ◽  
Recombination Velocity ◽  
Process Simulator

AbstractWe have developed a physically based modeling of TED of implanted boron in amorphised Si. The simulation starts with a supersaturation of Si free interstitials located below the amorphous/crystalline interface which, upon annealing, tend to diffuse out or to precipitate in the form of extended defects (clusters, {113}s, dislocation loops). The modeling of the nucleation and growth of these defects is divided into three distinct stages: the nucleation, the “pure growth” and the Ostwald ripening. This system can interact with a surface (characterized by a given recombination velocity for Si interstitials) only after the SPE regrowth is completed. Implementation of this model into a process simulator allows to describe the isothermal and isochronal evolutions of the sizes and of the densities of dislocation loops in agreement with TEM observations. Assuming that boron diffusion is caused by the concomitant time and space variations of the free interstitial supersaturation in the wafer, TED can be accurately predicted for a variety of experimental conditions.

On the Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Alain Claverie ◽  
Filadelfo Cristiano ◽  
Benjamin Colombeau ◽  
Nicholas Cowern
Keyword(s):  
Formation Energy ◽  
Ostwald Ripening ◽  
High Dose ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Dynamical Equilibrium ◽  
Defect Interactions ◽  
Small Clusters ◽  
Dose Levels ◽  
Extrinsic Defects

AbstractIn this paper, we discuss the mechanisms by which small clusters evolve through “magic” sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. The calculation of the supersaturation of free Si-interstitials in dynamical equilibrium with these defects shows a hierarchy of levels of nonequilibrium diffusion, ranging from supersaturations S of about 106 in the presence of small clusters, through 103 in the presence of {113} defects, to S in the range 100 down to 1 as loops are formed, evolve and finally evaporate. A detailed analysis of defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and modelling defect interactions during TED of dopants in silicon.

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

2001 ◽  
Vol 82-84 ◽  
pp. 201-206 ◽  
Author(s):  
Fuccio Cristiano ◽  
B. Colombeau ◽  
Caroline Bonafos ◽  
A. Altibelli ◽  
G. Benassayag ◽  
...  
Keyword(s):  
Thermal Evolution ◽  
Current Understanding ◽  
Extrinsic Defects ◽  
Ion Implanted

THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGa1−xAs/GaAs SUPERLATFICES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.C. DE COOMAN ◽  
C.B. CARTER ◽  
J. RALSTON ◽  
G.W. WICKS ◽  
L.F. EASTMAN
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Strain Field ◽  
Defect Structure ◽  
Extended Defects ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage ◽  
Ion Implanted

AbstractCross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed AlxGa1−xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

scholarly journals Effect of Low-Temperature Annealing on Creep Properties of AlSi10Mg Alloy Produced by Additive Manufacturing: Experiments and Modeling

Metals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 179
Author(s):  
Chiara Paoletti ◽  
Emanuela Cerri ◽  
Emanuele Ghio ◽  
Eleonora Santecchia ◽  
Marcello Cabibbo ◽  
...  
Keyword(s):  
Creep Rate ◽  
Applied Stress ◽  
Minimum Creep Rate ◽  
Annealing Treatment ◽  
Constant Load ◽  
Experimental Conditions ◽  
Creep Properties ◽  
Low Temperature Annealing ◽  
Physically Based ◽  
Excellent Description

The effects of postprocessing annealing at 225 °C for 2 h on the creep properties of AlSi10Mg alloy were investigated through constant load experiments carried out at 150 °C, 175 °C and 225 °C. In the range of the experimental conditions here considered, the annealing treatment resulted in an increase in minimum creep rate for a given stress. The reduction in creep strength was higher at the lowest temperature, while the effect progressively vanished as temperature increased and/or applied stress decreased. The minimum creep rate dependence on applied stress was modeled using a physically-based model which took into account the ripening of Si particles at high temperature and which had been previously applied to the as-deposited alloy. The model was successfully validated, since it gave an excellent description of the experimental data.

Growth Mechanism and Electrochemical Properties of Porous Hollow Tin Dioxide Nanospheres

NANO ◽  
2015 ◽  
Vol 10 (06) ◽  
pp. 1550087 ◽  
Author(s):  
Youwen Yang ◽  
Dongming Ma ◽  
Ting Cheng ◽  
Yuanhao Gao ◽  
Guanghai Li
Keyword(s):  
Growth Mechanism ◽  
Tin Dioxide ◽  
Ostwald Ripening ◽  
Lithium Ion ◽  
Average Diameter ◽  
Reversible Capacity ◽  
Cycling Performance ◽  
Experimental Conditions ◽  
Electrochemical Tests ◽  
Hydrolysis Method

Porous hollow SnO 2 nanospheres were prepared by means of enforced Sn 2+ hydrolysis method under hydrochloric acid medium. These hollow nanospheres with an average diameter of 220nm had a very thin shell thickness of about 40nm and were surrounded by elongated octahedral-like nanoparticles with the apex oriented outside. The experimental conditions, such as HCl content, reaction temperature and time directly dominated the morphology, structure and crystallinity of the obtained samples. A pre-oxidation-nucleation-growth mechanism and inside-out Ostwald-ripening method was proposed on the basis of the previous research and time-dependent experiments. Electrochemical tests showed that the porous hollow SnO 2 nanospheres exhibited improved cycling performance for anode materials of lithium-ion batteries, which retained a high reversible capacity of 540.0mAhg-1, and stable cyclic retention at 120th cycle.

Extended defects in ion-implanted si during nanosecond laser annealing

2014 ◽  
Author(s):  
F. Cristiano ◽  
Y. Qiu ◽  
E. Bedel-Pereira ◽  
K. Huet ◽  
F. Mazzamuto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Extended Defects ◽  
Ion Implanted

scholarly journals The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (Adv. Quantum Technol. 2/2018)

2018 ◽  
Vol 1 (2) ◽  
pp. 1870021 ◽  
Author(s):  
Tom Peach ◽  
Kevin Homewood ◽  
Manon Lourenco ◽  
Mark Hughes ◽  
Kaymar Saeedi ◽  
...  
Keyword(s):  
Hyperfine Structure ◽  
Annealing Conditions ◽  
Lattice Damage ◽  
Ion Implanted

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 713-716 ◽  
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Depth Distribution ◽  
Electrical Activation ◽  
Extended Defects ◽  
Capping Layer ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Lattice Damage ◽  
Reduced Surface

This paper reports on the electrical activation and structural analysis of Al implanted 4H-SiC. The evolution of the implant damage during high temperature (1650 – 1700 °C) annealing results in the presence of extended defects and precipitates, whose density and depth distribution in the implanted sheet was accurately studied for two different ion fluences (1.31014 and 1.31015 cm-2) by transmission electron microscopy. Furthermore, the profiles of electrically active Al were determined by scanning capacitance microscopy. Only a limited electrical activation (10%) was measured for both fluences in the samples annealed without a capping layer. The use of a graphite capping layer to protect the surface during annealing showed a beneficial effect, yielding both a reduced surface roughness and an increased electrical activation (20% for the highest fluence and 30% for the lowest one) with respect to samples annealed without the capping layer.

Interrogating the effects of ion-implantation-induced defects on the energy storage properties of bulk molybdenum disulphide

2018 ◽  
Vol 20 (44) ◽  
pp. 28232-28240 ◽  
Author(s):  
Patrick V. Mwonga ◽  
Rasmita Barik ◽  
Shunmugam R. Naidoo ◽  
Alex Quandt ◽  
Kenneth I. Ozoemena
Keyword(s):  
Energy Storage ◽  
Ion Implantation ◽  
Molybdenum Disulphide ◽  
Experimental Conditions ◽  
Energy Storage Properties ◽  
Induced Defects ◽  
Storage Properties ◽  
Ion Implanted

Under similar experimental conditions, W-ion-implanted MoS2 exhibits enhanced electrochemistry compared to the Mo-ion-implanted MoS2 counterpart.

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