P‐23: Enhancement in the Mobility and the Stability of Solution‐Processed Zinc‐Tin Oxide Thin‐Film Transistors Using Alkali Metal Superoxide

Tae Soo Jung; Heesoo Lee; Hee Jun Kim; Jin Hyeok Lee; Won Kyung Min; Kyungho Park; Hyun Jae Kim

doi:10.1002/sdtp.13172

P‐23: Enhancement in the Mobility and the Stability of Solution‐Processed Zinc‐Tin Oxide Thin‐Film Transistors Using Alkali Metal Superoxide

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.13172 ◽

2019 ◽

Vol 50 (1) ◽

pp. 1298-1301

Author(s):

Tae Soo Jung ◽

Heesoo Lee ◽

Hee Jun Kim ◽

Jin Hyeok Lee ◽

Won Kyung Min ◽

...

Keyword(s):

Thin Film ◽

Alkali Metal ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Stability Of Solution ◽

Zinc Tin Oxide ◽

The Stability

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Enhanced Bias Stability of Solution-Processed Zinc-Tin-Oxide Thin Film Transistors Using Self-Assembled Monolayer as a Selective Channel Passivation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7799 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7056-7058

Author(s):

Jae-Sang Heo ◽

Sung-Kyu Park

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Self Assembled Monolayer ◽

Solution Processed ◽

Stability Of Solution ◽

Bias Stability ◽

Zinc Tin Oxide ◽

Selective Channel

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Bias Stress Stability of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Journal of The Electrochemical Society ◽

10.1149/1.3212847 ◽

2009 ◽

Vol 156 (11) ◽

pp. H808 ◽

Cited By ~ 50

Author(s):

Youngmin Jeong ◽

Keunkyu Song ◽

Dongjo Kim ◽

Chang Young Koo ◽

Jooho Moon

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Bias Stress ◽

Stability Of Solution ◽

Zinc Tin Oxide

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Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors

Applied Physics Letters ◽

10.1063/1.4890579 ◽

2014 ◽

Vol 105 (2) ◽

pp. 023509 ◽

Cited By ~ 37

Author(s):

Li-Chih Liu ◽

Jen-Sue Chen ◽

Jiann-Shing Jeng

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxygen Vacancies ◽

Oxide Thin Film ◽

Solution Processed ◽

Stability Of Solution ◽

Zinc Tin Oxide

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Effects of Sol-Gel Organic-Inorganic Hybrid Passivation on Stability of Solution-Processed Zinc Tin Oxide Thin Film Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3603845 ◽

2011 ◽

Vol 14 (9) ◽

pp. H375 ◽

Cited By ~ 16

Author(s):

Seok-Jun Seo ◽

SeungCheol Yang ◽

Ji-Hoon Ko ◽

Byeong-Soo Bae

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Sol Gel ◽

Oxide Thin Film ◽

Solution Processed ◽

Inorganic Hybrid ◽

Stability Of Solution ◽

Zinc Tin Oxide

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Solution- Processed Alkali Metals-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors and Analysis of Alkali Metal Doping Mechanism through the UV-Visible Spectroscopic

ECS Meeting Abstracts ◽

10.1149/ma2014-02/47/1926 ◽

2014 ◽

Keyword(s):

Thin Film ◽

Alkali Metal ◽

Tin Oxide ◽

Thin Film Transistors ◽

Alkali Metals ◽

Oxide Thin Film ◽

Solution Processed ◽

Zinc Tin Oxide ◽

Doping Mechanism ◽

Uv Visible

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Effect of Zinc/Tin Composition Ratio on the Operational Stability of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2011.2171913 ◽

2012 ◽

Vol 33 (1) ◽

pp. 50-52 ◽

Cited By ~ 44

Author(s):

Yong-Hoon Kim ◽

Jeong-In Han ◽

Sung Kyu Park

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Operational Stability ◽

Oxide Thin Film ◽

Solution Processed ◽

Composition Ratio ◽

Stability Of Solution ◽

Zinc Tin Oxide

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Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

ECS Transactions ◽

10.1149/1.3481250 ◽

2019 ◽

Vol 33 (5) ◽

pp. 295-299 ◽

Cited By ~ 1

Author(s):

Bong-Jin Kim ◽

Hyung-Jun Kim ◽

Sung Mok Jung ◽

Tae-Sik Yoon ◽

Yong-Sang Kim ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Oxide Thin Film ◽

Solution Processed ◽

Nitrogen Effect ◽

Zinc Tin Oxide

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Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.1109/am-fpd.2015.7173189 ◽

2015 ◽

Author(s):

Ravindra Naik Bukke ◽

Christophe Avis ◽

Taehun Kim ◽

Jin Jang

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Zirconium Oxide ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Ozone Treatment ◽

Solution Processed ◽

Zinc Tin Oxide ◽

Uv Ozone

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Fabrication of solution-processed nitrogen-doped niobium zinc tin oxide thin film transistors using ethanolamine additives

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.09.151 ◽

2017 ◽

Vol 729 ◽

pp. 370-378 ◽

Cited By ~ 2

Author(s):

Jiann-Shing Jeng ◽

Chi-Min Wu

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Nitrogen Doped ◽

Zinc Tin Oxide

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Enhanced mobility of solution-processed polycrystalline zinc tin oxide thin-film transistors via direct incorporation of water into precursor solution

Applied Physics Letters ◽

10.1063/1.4896265 ◽

2014 ◽

Vol 105 (12) ◽

pp. 122105 ◽

Cited By ~ 12

Author(s):

Genmao Huang ◽

Lian Duan ◽

Yunlong Zhao ◽

Guifang Dong ◽

Deqiang Zhang ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Precursor Solution ◽

Oxide Thin Film ◽

Solution Processed ◽

Polycrystalline Zinc ◽

Zinc Tin Oxide ◽

Enhanced Mobility ◽

Direct Incorporation

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