P‐1.5: Fabrication of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors with Submicron Channel Length

2019 ◽  
Vol 50 (S1) ◽  
pp. 650-653
Author(s):  
Yunkai Cao ◽  
Huan Yang ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Amorphous Ingazno

Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz

2013 ◽  
Vol 60 (9) ◽  
pp. 2815-2820 ◽  
Author(s):  
Niko Munzenrieder ◽  
Luisa Petti ◽  
Christoph Zysset ◽  
Thomas Kinkeldei ◽  
Giovanni Antonio Salvatore ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Amorphous Ingazno ◽  
Transit Frequency

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

2021 ◽  
Vol 68 (3) ◽  
pp. 1050-1056
Author(s):  
Subhranu Samanta ◽  
Kaizhen Han ◽  
Chen Sun ◽  
Chengkuan Wang ◽  
Annie Kumar ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Channel Thickness ◽  
Amorphous Ingazno

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

2013 ◽  
Vol 52 (9R) ◽  
pp. 090205 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Bo-Ru Yang ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Amorphous Ingazno

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno
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