Contact resistance corrected-electrical characteristics with channel length effects in π-conjugated small-molecule benzanthracene organic thin film transistors

2021 ◽  
Vol 273 ◽  
pp. 116670
Author(s):  
Ahmed Al-Ghamdi ◽  
W. Boukhili ◽  
S. Wageh
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Small Molecule ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Electrical Characteristics ◽  
Organic Thin Film ◽  
Length Effects

Extraction of intrinsic contact resistance in organic thin-film transistors with single channel length and high capacitance density

2021 ◽  
Vol 119 (26) ◽  
pp. 263301
Author(s):  
Gunhee Kim ◽  
Canek Fuentes-Hernandez ◽  
Sangmoo Choi ◽  
Xiaojia Jia ◽  
Bernard Kippelen
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Single Channel ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Capacitance Density ◽  
High Capacitance

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

2011 ◽  
Vol 14 (8) ◽  
pp. H333 ◽  
Author(s):  
Minseok Kim ◽  
In-Kyu You ◽  
Hyun Han ◽  
Soon-Won Jung ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Offset Printing ◽  
Short Channel

High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing

2013 ◽  
Vol 14 (12) ◽  
pp. 3213-3221 ◽  
Author(s):  
Robert Hofmockel ◽  
Ute Zschieschang ◽  
Ulrike Kraft ◽  
Reinhold Rödel ◽  
Nis Hauke Hansen ◽  
...  
Keyword(s):  
Thin Film ◽  
Small Molecule ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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