P‐1.5: High‐performance indium oxide thin‐film transistors with UV‐treated zirconium oxide passivation layer

2021 ◽  
Vol 52 (S2) ◽  
pp. 694-694
Author(s):  
Yanan Ding ◽  
Fukai Shan
2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.


2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.


2019 ◽  
Vol 40 (12) ◽  
pp. 1949-1952 ◽  
Author(s):  
Yanan Ding ◽  
Caixuan Fan ◽  
Chuanyu Fu ◽  
You Meng ◽  
Guoxia Liu ◽  
...  

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