Abstract
Contamination in the gate oxide layer is the most common effect which cause the gate oxide integrate (GOI) issue. Dynamic Secondary Ion Mass Spectrometry (SIMS) is a mature tool for GOI contamination analysis. During the sample preparation, all metal and IDL layers above poly should be removed because the presence of these layers added complexity for the subsequent SIMS analysis. The normal delayering process is simply carried out by soaking the sample in the HF solution. However, the poly surface is inevitably contaminated by surroundings even though it is already a practice to clean with DI rinse and tape. In this article, TOFSIMS with low energy sputter gun is used to clean the sample surface after the normal delayering process. The residue signals also can be monitored by TOF SIMS during sputtering to confirm the cross contamination is cleared. After that, a much lower background desirable by dynamic SIMS. Thus an accurate depth profile in gate oxide layer can be achieved without the interference from surface.
Buried Oxide Formation in Low-Dose Low-Energy SIMOX