Depth profiles of Ag/Si(111) thin-film interface regions

1990 ◽  
Vol 15 (2) ◽  
pp. 126-134 ◽  
Author(s):  
G. P. Chambers ◽  
B. D. Sartwell
Keyword(s):  
Thin Film ◽  
Depth Profiles ◽  
Film Interface

scholarly journals Schottky barrier formation at the Au to rare earth doped GaN thin film interface

2011 ◽  
Vol 55 (3) ◽  
pp. 31301 ◽  
Author(s):  
S.R. McHale ◽  
J.W. McClory ◽  
J.C. Petrosky ◽  
J. Wu ◽  
A. Rivera ◽  
...  
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Rare Earth Doped ◽  
Film Interface

scholarly journals Effects of annealing atmosphere on the performance of Cu(InGa)Se 2 films sputtered from quaternary targets

2020 ◽  
Vol 7 (10) ◽  
pp. 200662
Author(s):  
Leng Zhang ◽  
Yongyi Yu ◽  
Jing Yu ◽  
Yaowei Wei
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Lower Amount ◽  
Annealing Atmosphere ◽  
Free Atmosphere ◽  
Recombination Mechanism ◽  
Depth Profiles ◽  
Interface Recombination ◽  
Cigs Thin Film ◽  
Device Efficiency

Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se 2 (CIGS) thin film for photovoltaics. However, without selenization, the device efficiency is much lower than that with selenization. To comprehensively examine this problem, we compared the morphologies, depth profiles, compositions, electrical properties and recombination mechanism of the absorbers fabricated with and without additional selenization. The results revealed that the amount of surface Se on CIGS films annealed in a Se-free atmosphere is less than that on CIGS films annealed in a Se-containing atmosphere. Additionally, the lower amount of surface Se reduced the carrier concentration, enhanced the resistivity of the CIGS film and allowed CIGS/CdS interface recombination to be the dominant recombination mechanism of CIGS device. The increase of interface recombination reduced the efficiency of the device annealed in a Se-free atmosphere.

Characterization of the Bonding Fracture Properties of the Asphalt-Aggregate System Using a Thin-Film Interface Test

2015 ◽  
Vol 44 (1) ◽  
pp. 20140409 ◽  
Author(s):  
Junyan Yi ◽  
Shihui Shen ◽  
Dongsheng Wang ◽  
Yudong Huang ◽  
Decheng Feng
Keyword(s):  
Thin Film ◽  
Fracture Properties ◽  
Film Interface ◽  
Aggregate System

Spin orientation transition across the single-layer graphene/nickel thin film interface

2013 ◽  
Vol 1 (35) ◽  
pp. 5533 ◽  
Author(s):  
Yoshihiro Matsumoto ◽  
Shiro Entani ◽  
Akihiro Koide ◽  
Manabu Ohtomo ◽  
Pavel V. Avramov ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Spin Orientation ◽  
Layer Graphene ◽  
Film Interface
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