In Situ Oxidation Synthesis of p-Type Composite with Narrow-Bandgap Small Organic Molecule Coating on Single-Walled Carbon Nanotube: Flexible Film and Thermoelectric Performance

Small ◽  
2018 ◽  
Vol 14 (12) ◽  
pp. 1703453 ◽  
Author(s):  
Caiyan Gao ◽  
Guangming Chen
2009 ◽  
Vol 1240 ◽  
Author(s):  
Ji-Ye Kang ◽  
Su-Mi Eo ◽  
Loon-Seng Tan ◽  
Jong-Beom Baek

AbstractSingle-walled carbon nanotube (SWCNT) and multi-walled carbon nanotube (MWCNT) were functionalized with 3,4-diaminobenzoic acid via “direct” Friedel-Crafts acylation reaction in PPA/P2O5 to afford ortho-diamino-functionalized SWCNT (DIF-SWCNT) and MWCNT (DIF-MWCNT). The resultant DIF-SWCNT and DIF-MWCNT showed improved solubility and dispersibility. To improve interfacial adhesion between CNT and polymer matrix, the grafting of ABPBI onto the surface of DIF-SWCNT (10 wt%) or DIF-MWCNT (10 wt%) was conducted by simple in-situ polymerization of AB monomer, 3,4-diaminobenzoic acid dihydrochloride, in PPA. The resultant ABPBI-g-MWCNT and ABPBI-g-SWCNT showed improved the mechanical and electrical properties.


RSC Advances ◽  
2016 ◽  
Vol 6 (91) ◽  
pp. 87919-87925 ◽  
Author(s):  
Qun He ◽  
Weiyu Xu ◽  
Shuangming Chen ◽  
Daobin Liu ◽  
Muhammad Habib ◽  
...  

Layered tungsten disulfide (WS2) is a potential electrode material for electric double layer capacitance (EDLC) and hydrogen evolution reaction (HER).


2010 ◽  
Vol 16 (38) ◽  
pp. 11753-11759 ◽  
Author(s):  
Martin Kalbáč ◽  
Ladislav Kavan ◽  
Sandeep Gorantla ◽  
Thomas Gemming ◽  
Lothar Dunsch

Science ◽  
2015 ◽  
Vol 350 (6256) ◽  
pp. 68-72 ◽  
Author(s):  
Qing Cao ◽  
Shu-Jen Han ◽  
Jerry Tersoff ◽  
Aaron D. Franklin ◽  
Yu Zhu ◽  
...  

Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to size-independent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabricated with a sub–10-nanometer contact length, showing a device resistance below 36 kilohms and on-current above 15 microampere per tube. The p-type end-bonded contact, formed through the reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier. This strategy promises high-performance SWNT transistors, enabling future ultimately scaled device technologies.


Nano Energy ◽  
2012 ◽  
Vol 1 (6) ◽  
pp. 820-827 ◽  
Author(s):  
Yingpeng Wu ◽  
Tengfei Zhang ◽  
Fan Zhang ◽  
Yan Wang ◽  
Yanfeng Ma ◽  
...  

2017 ◽  
Vol 10 (10) ◽  
pp. 2168-2179 ◽  
Author(s):  
Bradley A. MacLeod ◽  
Noah J. Stanton ◽  
Isaac E. Gould ◽  
Devin Wesenberg ◽  
Rachelle Ihly ◽  
...  

Polymer-free semiconducting carbon nanotube networks demonstrate unprecedented equivalent n- and p-type thermoelectric performance.


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