scholarly journals Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Small Methods ◽  
2021 ◽  
pp. 2100932
Author(s):  
Simone Dolabella ◽  
Aurelio Borzì ◽  
Alex Dommann ◽  
Antonia Neels
Keyword(s):  
High Resolution ◽  
Lattice Strain ◽  
Semiconductor Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Defects Analysis ◽  
Nanostructured Semiconductor

Ion Implantation Defect Characterization by High-Resolution X-Ray Diffraction

1992 ◽  
Vol 262 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Lattice Strain ◽  
Crystalline Silicon ◽  
High Energy ◽  
Silicon Sample ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Defect

ABSTRACTHigh-energy ion-implantation is one of the roost critical processing steps regarding the formation of defects in mono-crystalline silicon. High- as well as low-doses implanted at various energies can result in relatively high residual defect concentrations after post-implantation annealing.Before annealing, the crystal lattice strain is mainly caused by the point defects. After annealing, the accommodation of substitutional impurities is the main origin of the residual lattice strain. High-Resolution X-ray Diffraction (HRXD) has been frequently used for the characterization of these structures. Dislocation loops formed during the high temperature step, however, cause enhanced diffuse X-ray scattering, which can dominate the measured X-ray intensity in conventional HRXD.Triple axis diffractometry is used in this study to analyze the size, type and location of defects in a boron implanted and rapid thermally annealed silicon sample.

scholarly journals X-ray topography of subsurface crystal layers

2017 ◽  
Vol 50 (3) ◽  
pp. 727-733 ◽  
Author(s):  
Zbigniew Swiatek ◽  
Igor Fodchuk ◽  
Ruslan Zaplitnyy
Keyword(s):  
High Resolution ◽  
Structural Changes ◽  
Structural Distortion ◽  
Semiconductor Materials ◽  
X Ray Diffraction ◽  
Surface Processing ◽  
X Ray ◽  
Extinction Depth

New capabilities of the Berg–Barrett topographic method are demonstrated using a skew-asymmetric X-ray diffraction scheme for investigating structural changes near the surface of semiconductor materials. Specifying the X-ray extinction depth, the details of defects and strains are revealed with high resolution. Consequently, analysis of structural distortion of layers near the surface after various types of surface processing becomes more complete.

Lattice relaxation of nanostructured semiconductor pillars observed by high‐resolution x‐ray diffraction

1994 ◽  
Vol 64 (26) ◽  
pp. 3605-3607 ◽  
Author(s):  
Paul van der Sluis ◽  
Martin J. Verheijen ◽  
Jan Haisma
Keyword(s):  
High Resolution ◽  
Lattice Relaxation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanostructured Semiconductor

scholarly journals Study of KDP crystal lattice strain and stress by high resolution X-ray diffraction

2012 ◽  
Vol 61 (21) ◽  
pp. 210203
Author(s):  
Sun Yun ◽  
Wang Sheng-Lai ◽  
Gu Qing-Tian ◽  
Xu Xin-Guang ◽  
Ding Jian-Xu ◽  
...  
Keyword(s):  
High Resolution ◽  
Crystal Lattice ◽  
Lattice Strain ◽  
X Ray Diffraction ◽  
Kdp Crystal ◽  
X Ray

Lattice strain relaxation study in the Ga1−xAlxSb/GaSb system by high resolution x-ray diffraction

1997 ◽  
Vol 71 (11) ◽  
pp. 1549-1551 ◽  
Author(s):  
C. Bocchi ◽  
A. Bosacchi ◽  
S. Franchi ◽  
S. Gennari ◽  
R. Magnanini ◽  
...  
Keyword(s):  
High Resolution ◽  
Lattice Strain ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relaxation Study

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Tubulin structure at intermediate resolution

1995 ◽  
Vol 53 ◽  
pp. 852-853
Author(s):  
K. H. Downing ◽  
S. G. Wolf ◽  
E. Nogales
Keyword(s):  
High Resolution ◽  
Structural Data ◽  
Therapeutic Drug ◽  
Zinc Ions ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Negative Stain ◽  
Functional Mechanisms ◽  
Tubulin Structure

Microtubules are involved in a host of critical cell activities, many of which involve transport of organelles through the cell. Different sets of microtubules appear to form during the cell cycle for different functions. Knowledge of the structure of tubulin will be necessary in order to understand the various functional mechanisms of microtubule assemble, disassembly, and interaction with other molecules, but tubulin has so far resisted crystallization for x-ray diffraction studies. Fortuitously, in the presence of zinc ions, tubulin also forms two-dimensional, crystalline sheets that are ideally suited for study by electron microscopy. We have refined procedures for forming the sheets and preparing them for EM, and have been able to obtain high-resolution structural data that sheds light on the formation and stabilization of microtubules, and even the interaction with a therapeutic drug.Tubulin sheets had been extensively studied in negative stain, demonstrating that the same protofilament structure was formed in the sheets and microtubules. For high resolution studies, we have found that the sheets embedded in either glucose or tannin diffract to around 3 Å.

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