Ion Implantation Defect Characterization by High-Resolution X-Ray Diffraction

1992 ◽  
Vol 262 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Lattice Strain ◽  
Crystalline Silicon ◽  
High Energy ◽  
Silicon Sample ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Defect

ABSTRACTHigh-energy ion-implantation is one of the roost critical processing steps regarding the formation of defects in mono-crystalline silicon. High- as well as low-doses implanted at various energies can result in relatively high residual defect concentrations after post-implantation annealing.Before annealing, the crystal lattice strain is mainly caused by the point defects. After annealing, the accommodation of substitutional impurities is the main origin of the residual lattice strain. High-Resolution X-ray Diffraction (HRXD) has been frequently used for the characterization of these structures. Dislocation loops formed during the high temperature step, however, cause enhanced diffuse X-ray scattering, which can dominate the measured X-ray intensity in conventional HRXD.Triple axis diffractometry is used in this study to analyze the size, type and location of defects in a boron implanted and rapid thermally annealed silicon sample.

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

Characterization of Amorphized Zeolite A by Combining High-Energy X-ray Diffraction and High-Resolution Transmission Electron Microscopy

2012 ◽  
Vol 116 (48) ◽  
pp. 25293-25299 ◽  
Author(s):  
Kaku Sato ◽  
Toru Wakihara ◽  
Shinji Kohara ◽  
Koji Ohara ◽  
Junichi Tatami ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Energy ◽  
Zeolite A ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

High-resolution X-ray diffraction investigation on the evolution of the substructure of individual austenite grains in TRIP steels during tensile deformation

2014 ◽  
Vol 47 (3) ◽  
pp. 965-973 ◽  
Author(s):  
Romain Blondé ◽  
Enrique Jimenez-Melero ◽  
Richard Huizenga ◽  
Lie Zhao ◽  
Jonathan Wright ◽  
...  
Keyword(s):  
Martensitic Transformation ◽  
High Resolution ◽  
Tensile Deformation ◽  
Subgrain Size ◽  
High Energy ◽  
Uniaxial Tensile ◽  
X Ray Diffraction ◽  
X Ray ◽  
Trip Steels ◽  
Austenite Grains

The martensitic transformation behaviour of the metastable austenite phase in low-alloyed transformation-induced plasticity (TRIP) steels has been studiedin situusing high-energy X-ray diffraction during deformation. The austenite stability during tensile deformation has been evaluated at different length scales. A powder diffraction analysis has been performed to correlate the macroscopic behaviour of the material to the observed changes in the volume phase fraction. Moreover, the austenite deformation response has been studied at the length scale of individual grains, where an in-depth characterization of four selected grains has been performed, including grain volume, local carbon concentration and grain orientation. For the first time, a high-resolution far-field detector was used to study the initial and evolving structure of individual austenite grains during uniaxial tensile deformation. It was found that the austenite subgrain size does not change significantly during tensile deformation. Most austenite grains show a complete martensitic transformation in a single loading step.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

scholarly journals Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction

1999 ◽  
Vol 29 (4) ◽  
pp. 768-770 ◽  
Author(s):  
A. F. Beloto ◽  
E. Abramof ◽  
M. Ueda ◽  
L. A. Berni ◽  
G. F. Gomes
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

1993 ◽  
Vol 235 (1-2) ◽  
pp. 189-197 ◽  
Author(s):  
J.G.E. Klappe ◽  
I. Bársony ◽  
J.R. Liefting ◽  
T.W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Implantation Damage

On the effect of Au2+ion irradiation in an amorphous Fe–Si thin layer synthesized by ion implantation: a high resolution X-ray diffraction study

CrystEngComm ◽  
2013 ◽  
Vol 15 (12) ◽  
pp. 2251-2259 ◽  
Author(s):  
Alan S. de Menezes ◽  
Guilherme A. Calligaris ◽  
Rossano Lang ◽  
Adenilson O. dos Santos ◽  
Lisandro P. Cardoso
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Thin Layer ◽  
Diffraction Study ◽  
Ion Irradiation ◽  
X Ray Diffraction ◽  
X Ray
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